ZXTP25012 stock, ZXTP25012, ZXTP25012EFHTA


PartNumber	ZXTP25012EFHTA	ZXTP25012EZTA	ZXTP25012EFH
Description	Bipolar Transistors - BJT PNP 12V HIGH GAIN	Bipolar Transistors - BJT PNP 12V HIGH GAIN
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-3	SOT-89-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	12 V	- 12 V	-
Collector Base Voltage VCBO	12 V	- 20 V	-
Emitter Base Voltage VEBO	7 V	- 7 V	-
Maximum DC Collector Current	4 A	- 4.5 A	-
Gain Bandwidth Product fT	310 MHz	310 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXTP250	ZXTP25012	-
DC Current Gain hFE Max	500 at 10 mA, 2 V	1500 at - 10 mA, - 2 V	-
Height	1.02 mm	1.6 mm	-
Length	3.04 mm	4.6 mm	-
Packaging	Reel	Reel	-
Width	1.4 mm	2.6 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
DC Collector/Base Gain hfe Min	500 at 10 mA, 2 V, 300 at 1 A, 2 V, 50 at 4 A, 2 V	40 at -4.5 A, - 2 V	-
Pd Power Dissipation	1810 mW	19200 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000282 oz	0.004603 oz	-
Collector Emitter Saturation Voltage	-	- 70 mV	-
Continuous Collector Current	-	- 4.5 A	-

Search Part Number : "ZXTP25012", Match & Start with "ZXTP25012" - Total : 6

제조사	부분 #	설명
Diodes Incorporated	ZXTP25012EFHTA	Bipolar Transistors - BJT PNP 12V HIGH GAIN
Diodes Incorporated	ZXTP25012EZTA	Bipolar Transistors - BJT PNP 12V HIGH GAIN
	ZXTP25012EFH	신규 및 오리지널
	ZXTP25012EZTA-CUT TAPE	신규 및 오리지널
	ZXTP25012EZTA	Bipolar Transistors - BJT PNP 12V HIGH GAIN
	ZXTP25012EFHTA	Bipolar Transistors - BJT PNP 12V HIGH GAIN

ZXTP25012