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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC076N06NS3 G DISTI # 31260549 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP RoHS: Compliant | 5000 |
|
| BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 584In Stock |
|
| BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 584In Stock |
|
| BSC076N06NS3GATMA1 DISTI # BSC076N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC076N06NS3 G DISTI # C1S322000129058 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP RoHS: Compliant | 5000 |
|
| BSC076N06NS3G DISTI # BSC076N06NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) RoHS: Compliant Min Qty: 5000 | Asia - 5000 |
|
| BSC076N06NS3GXT DISTI # BSC076N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC076N06NS3GATMA1 DISTI # 47Y7996 | Infineon Technologies AG | MOSFET Transistor, N Channel, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V RoHS Compliant: Yes | 0 |
|
| BSC076N06NS3GATMA1. DISTI # 25AC6433 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:69W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSC076N06NS3 G DISTI # 726-BSC076N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 296 |
|
| BSC076N06NS3GATMA1 DISTI # 726-BSC076N06NS3GATM | Infineon Technologies AG | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC076N06NS3GXT | Infineon Technologies AG | 84 | ||
| BSC076N06NS3GATMA1 DISTI # 8259137P | Infineon Technologies AG | MOSFET N-CH 50A 60V OPTIMOS3 TDSON8EP, RL | 800 |
|
| BSC076N06NS3G | Infineon Technologies AG | 14 A, 60 V, 0.0076 ohm, N-CHANNEL, Si, POWER, MOSFET | 480 |
|
| BSC076N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2175 | |
| BSC076N06NS3 G | Infineon Technologies AG | 695 | ||
| BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC076N06NS3GATMA1 DISTI # 2443422 | Infineon Technologies AG | MOSFET, N CH, 60V, 50A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC076N06NS3 G | Infineon Technologies AG | RoHS(ship within 1day) | 600 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC076N06NS3 G OMO.#: OMO-BSC076N06NS3-G |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC076N06NS3GATMA1 OMO.#: OMO-BSC076N06NS3GATMA1 |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC076N04NDATMA1 OMO.#: OMO-BSC076N04NDATMA1 |
MOSFET TRENCH <= 40V |
|
Mfr.#: BSC076N06NS3 OMO.#: OMO-BSC076N06NS3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC076N06NS3 G OMO.#: OMO-BSC076N06NS3-G-1190 |
Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP |
|
|
Mfr.#: BSC076N06NS3G OMO.#: OMO-BSC076N06NS3G-1190 |
Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G) |
|
Mfr.#: BSC076N06NS3GATMA1 |
MOSFET N-CH 60V 50A TDSON-8 |
|
|
Mfr.#: BSC076N06NS3GATMA1 , TDA |
신규 및 오리지널 |