IRF60B217

IRF60B217
Mfr. #:
IRF60B217
제조사:
Infineon Technologies
설명:
MOSFET N-CH 60V 60A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF60B217 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IRF60B217 추가 정보
제품 속성
속성 값
제조사
국제 정류기
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
Tags
IRF60, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB Infineon IRF60B217
***et
Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube
***ure Electronics
Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***i-Key
MOSFET N-CH 60V 60A
***ark
Mosfet, N-Ch, 60V, 60A, To-220Ab; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 60V, 60A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:StrongIRFET, HEXFET Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 60V, 60A, TO-220AB; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:60A; Napięcie drenu / źródła Vds:60V; Rezystancja przewodzenia Rds(on):0.0073ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3.7V; Straty mocy Pd:83W; Rodzaj obudowy tranzystora:TO-220AB; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:StrongIRFET, HEXFET Series; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018)
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
부분 # 제조 설명 재고 가격
IRF60B217
DISTI # V99:2348_14701516
Infineon Technologies AGTrans MOSFET N-CH Si 60V 60A Tube
RoHS: Compliant
2785
  • 1:$1.1982
IRF60B217
DISTI # IRF60B217-ND
Infineon Technologies AGMOSFET N-CH 60V 60A
RoHS: Compliant
Min Qty: 1
Container: Tube
3826In Stock
  • 1000:$0.8055
  • 500:$0.9721
  • 100:$1.2499
  • 10:$1.5550
  • 1:$1.7200
IRF60B217
DISTI # 29529430
Infineon Technologies AGTrans MOSFET N-CH Si 60V 60A Tube
RoHS: Compliant
2785
  • 2000:$0.6848
  • 1000:$0.7102
  • 500:$0.7729
  • 100:$0.8677
  • 12:$1.0438
IRF60B217
DISTI # IRF60B217
Infineon Technologies AGTrans MOSFET N 60V 60A 3-Pin TO-220 Tube - Rail/Tube (Alt: IRF60B217)
RoHS: Compliant
Min Qty: 3000
Container: Tube
Americas - 0
  • 3000:$0.5819
  • 5000:$0.5609
  • 8000:$0.5399
  • 15000:$0.5219
  • 30000:$0.5129
IRF60B217
DISTI # 12AC9751
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power RoHS Compliant: Yes5948
  • 1:$1.5900
  • 10:$1.3700
  • 100:$1.1200
  • 500:$0.9910
  • 1000:$0.8430
  • 2500:$0.7920
  • 10000:$0.7430
IRF60B217
DISTI # 942-IRF60B217
Infineon Technologies AGMOSFET 60V, 60A, 9.0 mOhm 44 nC Qg
RoHS: Compliant
828
  • 1:$1.4900
  • 10:$1.2700
  • 100:$1.0100
  • 500:$0.8840
  • 1000:$0.7330
IRF60B217
DISTI # 1236144
Infineon Technologies AGSTRONGIR FET 60V 60A 9.0 MOHMTO220AB, PK3040
  • 10:£1.2810
  • 50:£1.0890
  • 200:£0.9610
  • 500:£0.8330
IRF60B217
DISTI # C1S322000609819
Infineon Technologies AGMOSFETs2785
  • 1000:$0.6972
  • 500:$0.7728
  • 100:$0.8675
  • 10:$1.0436
IRF60B217
DISTI # 2709977
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB
RoHS: Compliant
5953
  • 5:£1.0700
  • 25:£0.9450
  • 100:£0.7730
  • 250:£0.7240
  • 500:£0.6750
IRF60B217
DISTI # 2709977
Infineon Technologies AGMOSFET, N-CH, 60V, 60A, TO-220AB
RoHS: Compliant
5948
  • 1:$2.7500
  • 10:$2.4800
  • 100:$2.0000
  • 500:$1.5500
  • 1000:$1.2900
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IRF6217TRPBF-CUT TAPE

Mfr.#: IRF6217TRPBF-CUT TAPE

OMO.#: OMO-IRF6217TRPBF-CUT-TAPE-1190

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IRF614STRLPBF

Mfr.#: IRF614STRLPBF

OMO.#: OMO-IRF614STRLPBF-1190

신규 및 오리지널
IRF630NPBF-CN

Mfr.#: IRF630NPBF-CN

OMO.#: OMO-IRF630NPBF-CN-1190

신규 및 오리지널
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Mfr.#: IRF630NSTRL

OMO.#: OMO-IRF630NSTRL-1190

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IRF640STRRPBF

Mfr.#: IRF640STRRPBF

OMO.#: OMO-IRF640STRRPBF-VISHAY

Darlington Transistors MOSFET N-Chan 200V 18 Amp
IRF610STRRPBF

Mfr.#: IRF610STRRPBF

OMO.#: OMO-IRF610STRRPBF-VISHAY

IGBT Transistors MOSFET N-Chan 200V 3.3 Amp
IRF6721STRPBF

Mfr.#: IRF6721STRPBF

OMO.#: OMO-IRF6721STRPBF-INFINEON-TECHNOLOGIES

RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
유효성
재고:
Available
주문 시:
2000
수량 입력:
IRF60B217의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.77
US$0.77
10
US$0.73
US$7.29
100
US$0.69
US$69.04
500
US$0.65
US$326.00
1000
US$0.61
US$613.70
시작
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