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| PartNumber | IRF60R217 | IRF60B217 | IRF60DM206 |
| Description | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
| Package / Case | TO-252-3 | TO-220-3 | DirectFET-ME |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 58 A | 60 A | 130 A |
| Rds On Drain Source Resistance | 8 mOhms | 7.3 mOhms | 2.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 40 nC | 44 nC | 133 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 150 C |
| Pd Power Dissipation | 83 W | 83 W | 96 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | StrongIRFET | StrongIRFET | StrongIRFET |
| Packaging | Reel | Tube | Reel |
| Height | 2.3 mm | 15.65 mm | 0.7 mm |
| Length | 6.5 mm | 10 mm | 6.35 mm |
| Width | 6.22 mm | 4.4 mm | 5.05 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 120 S | 150 S | 148 S |
| Fall Time | 12 ns | 20 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 29 ns | 37 ns | 32 ns |
| Factory Pack Quantity | 2000 | 1000 | 4800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 24 ns | 60 ns |
| Typical Turn On Delay Time | 7.6 ns | 8.3 ns | 17 ns |
| Part # Aliases | SP001559662 | SP001571396 | SP001561876 |
| Unit Weight | 0.081130 oz | 0.081130 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF60R217 | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | |
| IRF60B217 | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | ||
| IRF60DM206 | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | ||
Vishay / Siliconix |
IRF610SPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | |
| IRF610PBF | MOSFET N-CH 200V HEXFET MOSFET | ||
| IRF610STRLPBF | MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRRPBF | MOSFET N-CH 200V HEXFET MOSFET D2-PA | ||
| IRF610STRR | MOSFET RECOMMENDED ALT 844-IRF610STRRPBF | ||
| IRF610S | MOSFET RECOMMENDED ALT 844-IRF610SPBF | ||
| IRF610LPBF | MOSFET RECOMMENDED ALT 844-IRF610SPBF | ||
Vishay |
IRF610PBF | MOSFET N-CH 200V 3.3A TO-220AB | |
| IRF610LPBF | MOSFET N-CH 200V 3.3A TO-262 | ||
| IRF610L | MOSFET N-CH 200V 3.3A TO-262 | ||
| IRF610S | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610STRL | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610STRR | MOSFET N-CH 200V 3.3A D2PAK | ||
| IRF610SPBF | Darlington Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRLPBF | IGBT Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610STRRPBF | IGBT Transistors MOSFET N-Chan 200V 3.3 Amp | ||
| IRF610 | MOSFET N-CH 200V 3.3A TO-220AB | ||
Infineon Technologies |
IRF60R217 | MOSFET N-CH 60V 58A | |
| IRF60B217 | MOSFET N-CH 60V 60A | ||
| IRF60DM206 | MOSFET N-CH 60V 130A | ||
| IRF6100 | MOSFET P-CH 20V 5.1A FLIP-FET | ||
| IRF6100PBF | MOSFET P-CH 20V 5.1A FLIPFET | ||
| IRF60DM206-CUT TAPE | 신규 및 오리지널 | ||
| IRF610B_FP001 | MOSFET 200V Single | ||
| IRF610_R4941 | MOSFET TO-220AB N-Ch Powe | ||
| IRF610R | *** FREE SHIPPING ORDERS OVER $100 *** | ||
| IRF6053 | 신규 및 오리지널 | ||
| IRF60DM206TRPBF | 신규 및 오리지널 | ||
| IRF610 , MM3Z6V2 | 신규 및 오리지널 | ||
| IRF610-TSTU | 신규 및 오리지널 | ||
| IRF610. | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF6100PBF,IRF6100,F6100 | 신규 및 오리지널 | ||
| IRF6100TR PBF | 신규 및 오리지널 | ||
| IRF610A | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF610AZ-TSTU | 신규 및 오리지널 | ||
| IRF610B | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | ||
| IRF610N | 신규 및 오리지널 | ||
| IRF610PBF(IRF610) | 신규 및 오리지널 | ||
| IRF610PBF,IRF610A,IRF610 | 신규 및 오리지널 | ||
| IRF610R4941 | 신규 및 오리지널 | ||
| IRF610S2497 | 신규 및 오리지널 | ||
| IRF610STRPBF | 신규 및 오리지널 | ||
| IRF611 | Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF6110 | 신규 및 오리지널 | ||
| IRF611A | 신규 및 오리지널 | ||
| IRF611R | 신규 및 오리지널 | ||
| IRF612 | Power Field-Effect Transistor, 2.6A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |