SSM6N68NU,LF

Mfr. #:: SSM6N68NU,LF
제조사:: Toshiba
설명:: MOSFET LowON Res MOSFET ID=4A VDSS=30V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SSM6N68NU,LF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SSM6N68NU,LF Datasheet SSM6N68NU,LF Datasheet (P4-P6)SSM6N68NU,LF Datasheet (P7-P9)
ECAD Model:
추가 정보:: SSM6N68NU,LF 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: UDFN-6

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 4 A

Rds On - 드레인 소스 저항:: 84 mOhms

Vgs th - 게이트 소스 임계 전압:: 400 mV

Vgs - 게이트 소스 전압:: 12 V, - 8 V

Qg - 게이트 차지:: 1.8 nC

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1 W

구성:: 듀얼

채널 모드:: 상승

포장:: 릴

시리즈:: SSM6N68NU

상표:: 도시바

순방향 트랜스컨덕턴스 - 최소:: 5.2 S

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 9 ns

일반적인 켜기 지연 시간:: 26 ns

단위 무게:: 0.000300 oz

Tags: SSM6N6, SSM6N, SSM6, SSM

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Quality Guarantees

We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM6N68NU,LF 추가 정보

U-MOSVIII-H Low Voltage High Efficiency MOSFETs: Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.

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