SSM6N6

SSM6N61NU,LF vs SSM6N61NU vs SSM6N67NU

 
PartNumberSSM6N61NU,LFSSM6N61NUSSM6N67NU
DescriptionMOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseUDFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance108 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge3.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.75 mm--
Length2 mm--
ProductMOSFETs--
SeriesSSM6N61--
Transistor Type2 N-Channel--
TypeSilicon N-Channel MOS--
Width2 mm--
BrandToshiba--
Forward Transconductance Min12 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time25 ns--
Package Case-6-WDFN Exposed Pad-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-UDFN (2x2)-
FET Type-2 N-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-410pF @ 10V-
FET Feature-Logic Level Gate, 1.5V Drive-
Current Continuous Drain Id 25°C-4A-
Rds On Max Id Vgs-33 mOhm @ 4A, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs-3.6nC @ 4.5V-
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
SSM6N61NU,LF MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A
SSM6N67NU,LF MOSFET LowON Res MOSFET ID=4A VDSS=30V
SSM6N68NU,LF MOSFET LowON Res MOSFET ID=4A VDSS=30V
SSM6N61NU 신규 및 오리지널
SSM6N67NU 신규 및 오리지널
SSM6N68NU 신규 및 오리지널
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