IRF630SPBF

Mfr. #:: IRF630SPBF
제조사:: Vishay
설명:: Darlington Transistors MOSFET N-Chan 200V 9.0 Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF630SPBF 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: IR

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.050717 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-252-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 20 ns

상승 시간: 28 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 9 A

Vds-드레인-소스-고장-전압: 200 V

Rds-On-Drain-Source-Resistance: 400 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 39 ns

일반 켜기 지연 시간: 9.4 ns

순방향 트랜스컨덕턴스-최소: 3.8 S

채널 모드: 상승

Tags: IRF630S, IRF630, IRF63, IRF6, IRF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630SPBF 설명

***et: Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK

***i-Key: MOSFET N-CH 200V 9A D2PAK

***: 200V N-CH HEXFET MOSFET,D2-PAK

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):400mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes

***nell: MOSFET, N, 200V, 9A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:9A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:36A; Power Dissipation:74W; Power, Pd:74W; Resistance, Rds on @ Vgs = 10V:0.3ohm; Thermal Resistance, Junction to Case A:1.7°C/W; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V

***ment14 APAC: MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:74W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:9A; Junction to Case Thermal Resistance A:1.7°C/W; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:74W; Power Dissipation Pd:74W; Pulse Current Idm:36A; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Market price

부분 #	제조	설명	재고	가격
IRF630SPBF DISTI # V36:1790_09218888	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	2841	1000:$0.7570 500:$0.8705 100:$0.9918 50:$1.2150
IRF630SPBF DISTI # V99:2348_09218888	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	477	1000:$0.7570 500:$0.8705 100:$0.9918 50:$1.2150
IRF630SPBF DISTI # IRF630SPBF-ND	Vishay Siliconix	MOSFET N-CH 200V 9A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	710In Stock	1000:$0.8725 500:$1.0530 100:$1.3538 10:$1.6850 1:$1.8700
IRF630SPBF DISTI # 28975898	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	2800	1000:$0.7570 500:$0.8705 100:$0.9918 50:$1.2150
IRF630SPBF DISTI # 25872758	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	477	100:$0.9918 50:$1.2150
IRF630SPBF DISTI # 29754246	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	384	10000:$0.6894 5000:$0.7177 2000:$0.7449 1000:$0.8003 500:$0.9657 100:$1.1088 24:$1.4314
IRF630SPBF DISTI # IRF630SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK (Alt: IRF630SPBF) RoHS: Compliant Min Qty: 1	Europe - 650	1:€1.4499 10:€1.2209 25:€1.2179 50:€1.2149 100:€0.9409 500:€0.8199 1000:€0.6789
IRF630SPBF DISTI # IRF630SPBF	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK - Bulk (Alt: IRF630SPBF) RoHS: Not Compliant Min Qty: 1000 Container: Bulk	Americas - 0
IRF630SPBF DISTI # 63J7340	Vishay Intertechnologies	N CHANNEL MOSFET, 200V, 9A, SMD-220,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:200V,On Resistance Rds(on):400mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-, RoHS Compliant: Yes	0	1:$1.5400 10:$1.2600 100:$1.1500 250:$1.0400 500:$0.9080 1000:$0.7940 2000:$0.7390 5000:$0.6840
IRF630SPBF DISTI # 844-IRF630SPBF	Vishay Intertechnologies	MOSFET N-Chan 200V 9.0 Amp RoHS: Compliant	849	1:$1.7000 10:$1.4200 100:$1.1000 500:$0.9580 1000:$0.7940 2000:$0.7390 5000:$0.7120 10000:$0.6840
IRF630S DISTI # 844-IRF630S	Vishay Intertechnologies	MOSFET N-Chan 200V 9.0 Amp RoHS: Not compliant	0
IRF630SPBF	Vishay Siliconix	9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET	21	11:$1.2500 3:$2.0000 1:$2.5000
IRF630SPBF	Vishay Siliconix		27	3:$1.8750 12:$1.2188
IRF630SPBF	Vishay Siliconix	RoHS: Compliant	Europe - 250
IRF630SPBF DISTI # 8657726	Vishay Intertechnologies	MOSFET, N, 200V, 9A, D2-PAK RoHS: Compliant	0	1:$2.6900 10:$2.2500 100:$1.7500 500:$1.5200 1000:$1.2600 2000:$1.1700 5000:$1.1300 10000:$1.0900
IRF630SPBF	Vishay Intertechnologies	MOSFET N-Chan 200V 9.0 Amp RoHS: Compliant	Americas -
IRF630SPBF DISTI # C1S803600788808	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	400	100:$0.8040 50:$0.9560 25:$1.0700 5:$1.4700
IRF630SPBF DISTI # C1S806000603520	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	2141	50:$1.3914
IRF630SPBF DISTI # C1S803601899660	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK RoHS: Compliant	477	100:$0.9903 10:$1.2118

영상	부분 #	설명
	Mfr.#: IRF634STRLPBF OMO.#: OMO-IRF634STRLPBF-VISHAY	MOSFET N-CHANNEL 250V
	Mfr.#: IRF634NSTRRPBF OMO.#: OMO-IRF634NSTRRPBF-1190	MOSFET N-Chan 250V 8.0 Amp
	Mfr.#: IRF634BTSTU_FP001 OMO.#: OMO-IRF634BTSTU-FP001-1190	250V N-Channel BFET MOSFET
	Mfr.#: IRF630APBF OMO.#: OMO-IRF630APBF-1190	신규 및 오리지널
	Mfr.#: IRF630B_FP001 OMO.#: OMO-IRF630B-FP001-ON-SEMICONDUCTOR	MOSFET N-CH 200V 9A TO-220
	Mfr.#: IRF630NPBFINFINEON-CSP2 OMO.#: OMO-IRF630NPBFINFINEON-CSP2-1190	신규 및 오리지널
	Mfr.#: IRF632 OMO.#: OMO-IRF632-1190	Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: IRF634B,IRF634A OMO.#: OMO-IRF634B-IRF634A-1190	신규 및 오리지널
	Mfr.#: IRF634NLPBF OMO.#: OMO-IRF634NLPBF-VISHAY	MOSFET N-CH 250V 8A TO-262
	Mfr.#: IRF634NPBF OMO.#: OMO-IRF634NPBF-VISHAY	MOSFET N-CH 250V 8A TO-220AB

IRF630SPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes