BSM25GD120DN2

Mfr. #:: BSM25GD120DN2
제조사:: Infineon Technologies
설명:: IGBT Modules 1200V 25A FL BRIDGE
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSM25GD120DN2 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 모듈

RoHS:: Y

제품:: IGBT 실리콘 모듈

구성:: 마녀

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 2.5 V

25C에서 연속 수집기 전류:: 35 A

게이트-이미터 누설 전류:: 180 nA

Pd - 전력 손실:: 200 W

패키지/케이스:: EconoPACK 2A

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

포장:: 쟁반

키:: 17 mm

길이:: 107.5 mm

너비:: 45 mm

상표:: 인피니언 테크놀로지스

장착 스타일:: 섀시 마운트

최대 게이트 이미터 전압:: 20 V

상품 유형:: IGBT 모듈

공장 팩 수량:: 10

하위 카테고리:: IGBT

부품 번호 별칭:: BSM25GD120DN2BOSA1 SP000100370

단위 무게:: 6.349313 oz

Tags: BSM25GD120DN2, BSM25GD120DN, BSM25GD120D, BSM25GD12, BSM25GD, BSM25G, BSM25, BSM2, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM25GD120DN2 설명

***ser: IGBT - Standard Modules 1200V,25A,FL BRIDGE

***omponent: TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2

***nell: IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:25A; Voltage, Vce sat max:3V; Power dissipation:200W; Case style:Econopack 2; Current, Icm pulsed:50A; Power, Pd:200W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V

Market price

부분 #	제조	설명	재고	가격
BSM25GD120DN2BOSA1 DISTI # BSM25GD120DN2BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-2 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$91.5730
BSM25GD120DN2E3224BOSA1 DISTI # BSM25GD120DN2E3224BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-2 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$91.5730
BSM25GD120DN2BOSA1 DISTI # BSM25GD120DN2BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$85.3900 20:$82.3900 40:$79.3900 60:$76.6900 100:$75.2900
BSM25GD120DN2E3224 DISTI # SP000100361	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€81.2900 10:€78.8900 25:€77.9900 50:€74.0900 100:€72.7900 500:€71.9900 1000:€70.9900
BSM25GD120DN2E3224BOSA1 DISTI # BSM25GD120DN2E3224BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$85.3900 20:$82.3900 40:$79.3900 60:$76.6900 100:$75.2900
BSM25GD120DN2 DISTI # 95M4164	Infineon Technologies AG	IGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes	0	1:$94.9300 5:$93.1900 10:$88.9900
BSM25GD120DN2 DISTI # 641-BSM25GD120DN2	Infineon Technologies AG	IGBT Modules 1200V 25A FL BRIDGE RoHS: Compliant	0
BSM25GD120DN2E3224 DISTI # 641-BSM25GD120DN2E32	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 35A RoHS: Compliant	0	1:$94.9300 5:$93.1900 10:$88.9900 25:$86.0300
BSM25GD120DN2E3224 DISTI # IGBT1939	Infineon Technologies AG	Sixpack1200V 35A Econo 2 RoHS: Compliant	Stock DE - 0Stock US - 0	10:$100.9500 20:$86.2100
BSM25GD120DN2 DISTI # 1496948	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	0	1:£73.2500 5:£71.9100 10:£70.6300
BSM25GD120DN2 DISTI # 1496948	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	0	1:$150.2200 5:$147.4700 10:$146.4300

관련 상품

영상	부분 #	설명
	Mfr.#: BSM25GD120DN2 OMO.#: OMO-BSM25GD120DN2	IGBT Modules 1200V 25A FL BRIDGE
	Mfr.#: BSM25GAL120D OMO.#: OMO-BSM25GAL120D-1190	신규 및 오리지널
	Mfr.#: BSM25GAL120DN2 OMO.#: OMO-BSM25GAL120DN2-1190	신규 및 오리지널
	Mfr.#: BSM25GB100D OMO.#: OMO-BSM25GB100D-1190	Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
	Mfr.#: BSM25GD100D OMO.#: OMO-BSM25GD100D-1190	신규 및 오리지널
	Mfr.#: BSM25GD120DN1 OMO.#: OMO-BSM25GD120DN1-1190	신규 및 오리지널
	Mfr.#: BSM25GD120DN2E224 OMO.#: OMO-BSM25GD120DN2E224-1190	신규 및 오리지널
	Mfr.#: BSM25GP120B2 OMO.#: OMO-BSM25GP120B2-1190	신규 및 오리지널
	Mfr.#: BSM25GD120DN2BOSA1 OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES	35 A, 1200 V, N-CHANNEL IGBT
	Mfr.#: BSM25GD120DN2 OMO.#: OMO-BSM25GD120DN2-125	IGBT Modules 1200V 25A FL BRIDGE

유효성

재고:: Available
주문 시:: 1000
수량 입력:

BSM25GD120DN2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$94.92~~; ~~US$94.92~~

5: ~~US$93.18~~; ~~US$465.90~~

10: ~~US$88.98~~; ~~US$889.80~~

25: ~~US$86.02~~; ~~US$2 150.50~~

100: ~~US$80.09~~; ~~US$8 009.00~~

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BSM25GD120DN2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes