SI4431BDY-T1-GE3

SI4431BDY-T1-GE3
Mfr. #:
SI4431BDY-T1-GE3
제조사:
Vishay
설명:
MOSFET P-CH 30V 5.7A 8SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4431BDY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI4431BDY-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
포장
부분 별칭
SI4431BDY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
SOIC-Narrow-8
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 P-Channel
Pd 전력 손실
1.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
10 ns
상승 시간
10 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
5.7 A
Vds-드레인-소스-고장-전압
- 30 V
Rds-On-Drain-Source-Resistance
30 mOhms
트랜지스터 극성
P-채널
일반 꺼짐 지연 시간
70 ns
일반 켜기 지연 시간
10 ns
채널 모드
상승
Tags
SI4431BDY-T, SI4431BD, SI4431B, SI4431, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet P-ch 30V 5.7A 8-PIN SOIC N T/r
*** Source Electronics
MOSFET P-CH 30V 5.7A 8SOIC
***
P-CHANNEL 30-V (D-S) MOSFET
***ure Electronics
30V 0.03 Ohm P-ch SOIC-8
***i-Key
MOSFET P-CH 30V 5.7A 8SO
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:1.5W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3-ND
Vishay SiliconixMOSFET P-CH 30V 5.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.4928
SI4431BDY-T1-GE3
DISTI # SI4431BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.4249
  • 5000:$0.4119
  • 10000:$0.3949
  • 15000:$0.3839
  • 25000:$0.3739
SI4431BDY-T1-GE3
DISTI # 15R5014
Vishay IntertechnologiesP CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.4390
  • 2500:$0.4360
  • 5000:$0.4230
  • 10000:$0.4070
SI4431BDY-T1-GE3
DISTI # 84R8048
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):23mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.5W , RoHS Compliant: Yes0
  • 1:$0.9200
  • 10:$0.7580
  • 25:$0.6990
  • 50:$0.6410
  • 100:$0.5820
  • 250:$0.5410
  • 500:$0.5000
SI4431BDY-T1-GE3
DISTI # 781-SI4431BDY-GE3
Vishay IntertechnologiesMOSFET 30V 7.5A 2.5W 30mohm @ 10V
RoHS: Compliant
1970
  • 1:$0.9200
  • 10:$0.7580
  • 100:$0.5820
  • 500:$0.5000
  • 1000:$0.3950
  • 2500:$0.3690
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:$1.8400
SI4431BDY-T1-GE3
DISTI # 1868999
Vishay IntertechnologiesP CH MOSFET
RoHS: Compliant
0
  • 2500:£0.8190
영상 부분 # 설명
SI4431BDY-T1-E3

Mfr.#: SI4431BDY-T1-E3

OMO.#: OMO-SI4431BDY-T1-E3

MOSFET 30V (D-S) 7.5A
SI4431BDY-T1-GE3

Mfr.#: SI4431BDY-T1-GE3

OMO.#: OMO-SI4431BDY-T1-GE3

MOSFET 30V 7.5A 2.5W 30mohm @ 10V
SI4431BDY-T1-E3-CUT TAPE

Mfr.#: SI4431BDY-T1-E3-CUT TAPE

OMO.#: OMO-SI4431BDY-T1-E3-CUT-TAPE-1190

신규 및 오리지널
SI4431BDY

Mfr.#: SI4431BDY

OMO.#: OMO-SI4431BDY-1190

MOSFET Transistor, P-Channel, SO
SI4431BDY-T1-E3

Mfr.#: SI4431BDY-T1-E3

OMO.#: OMO-SI4431BDY-T1-E3-VISHAY

MOSFET P-CH 30V 5.7A 8-SOIC
SI4431BDY-T1-E3 GE3

Mfr.#: SI4431BDY-T1-E3 GE3

OMO.#: OMO-SI4431BDY-T1-E3-GE3-1190

신규 및 오리지널
SI4431BDY-T1-E3-S

Mfr.#: SI4431BDY-T1-E3-S

OMO.#: OMO-SI4431BDY-T1-E3-S-1190

신규 및 오리지널
SI4431BDY-T1-E3CT

Mfr.#: SI4431BDY-T1-E3CT

OMO.#: OMO-SI4431BDY-T1-E3CT-1190

신규 및 오리지널
SI4431BDY-T1-GE3

Mfr.#: SI4431BDY-T1-GE3

OMO.#: OMO-SI4431BDY-T1-GE3-VISHAY

MOSFET P-CH 30V 5.7A 8SOIC
SI4431BDYT1E3

Mfr.#: SI4431BDYT1E3

OMO.#: OMO-SI4431BDYT1E3-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
2000
수량 입력:
SI4431BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.55
US$0.55
10
US$0.53
US$5.26
100
US$0.50
US$49.82
500
US$0.47
US$235.25
1000
US$0.44
US$442.80
시작
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