We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
부분 # | 제조 | 설명 | 재고 | 가격 |
---|---|---|---|---|
SIHB22N60EL-GE3 DISTI # SIHB22N60EL-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 21A TO263 RoHS: Not compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
SIHB22N60EL-GE3 DISTI # SIHB22N60EL-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60EL-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
SIHB22N60EL-GE3 DISTI # SIHB22N60EL-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 21A 3-Pin D2PAK (Alt: SIHB22N60EL-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
SIHB22N60EL-GE3 DISTI # 78-SIHB22N60EL-GE3 | Vishay Intertechnologies | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 |
|
영상 | 부분 # | 설명 |
---|---|---|
Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3 |
MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode | |
Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB22N65E-GE3 OMO.#: OMO-SIHB22N65E-GE3 |
MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3 |
MOSFET 600V Vds E Series D2PAK TO-263 | |
Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY |
MOSFET N-CHAN 600V | |
Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY |
MOSFET N-CH 600V 21A D2PAK | |
Mfr.#: SIHB22N60SE3 OMO.#: OMO-SIHB22N60SE3-1190 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: SIHB22N60SGE3 OMO.#: OMO-SIHB22N60SGE3-1190 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: SIHB22N60EL-GE3 OMO.#: OMO-SIHB22N60EL-GE3-VISHAY |
MOSFET N-CH 600V 21A TO263 |