SIHB22N60E-GE3

Mfr. #:: SIHB22N60E-GE3
제조사:: Vishay
설명:: MOSFET N-CH 600V 21A D2PAK
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHB22N60E-GE3 데이터 시트
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ECAD Model:
추가 정보:: SIHB22N60E-GE3 추가 정보

제품 속성
속성 값

Tags: SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB22N60E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHB22N60E-GE3 DISTI # V99:2348_09219018	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK RoHS: Compliant	718	1000:$2.1720 500:$2.3769 250:$2.6410 100:$2.7990 10:$3.4110 1:$4.4978
SIHB22N60E-GE3 DISTI # V36:1790_09219018	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$2.0180 500000:$2.0220 100000:$2.6020 10000:$3.7670 1000:$3.9700
SIHB22N60E-GE3 DISTI # SIHB22N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	6945In Stock	5000:$1.9891 3000:$2.0668 1000:$2.1756 100:$3.0303 25:$3.4964 10:$3.6990 1:$4.1200
SIHB22N60E-GE3 DISTI # 31314797	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK RoHS: Compliant	718	4:$4.4978
SIHB22N60E-GE3 DISTI # SIHB22N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK (Alt: SIHB22N60E-GE3) RoHS: Compliant Min Qty: 1	Europe - 1000	1000:€1.4900 50:€1.5900 100:€1.5900 500:€1.5900 25:€1.7900 10:€2.1900 1:€2.8900
SIHB22N60E-GE3 DISTI # SIHB22N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB22N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Tube	Americas - 0	6000:$1.7900 10000:$1.7900 2000:$1.8900 4000:$1.8900 1000:$1.9900
SIHB22N60E-GE3 DISTI # 83T7333	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:227W,No. of Pins:3 RoHS Compliant: Yes	939	2500:$2.2000 1000:$2.3000 500:$2.6700 100:$3.0200 50:$3.2100 25:$3.4200 10:$3.6100 1:$4.2900
SIHB22N60E-E3 DISTI # 781-SIHB22N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2025	1:$4.1400 10:$3.4300 100:$2.8200 250:$2.7300 500:$2.4500 1000:$2.0700 2000:$1.9600
SIHB22N60E-GE3 DISTI # 781-SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2740	1:$4.1400 10:$3.4300 100:$2.8200 250:$2.7300 500:$2.4500 1000:$2.0700 2000:$1.9600
SIHB22N60E-GE3 DISTI # 7689313P	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 21A D2PAK, TU	1653	200:£1.8100 100:£1.8500 50:£1.9200 10:£2.0900
SIHB22N60EGE3	Vishay Siliconix	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	250
SIHB22N60E-GE3 DISTI # TMOSP10774	Vishay Intertechnologies	MOSFET650V 180mOhm21A TO263 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.9200
SIHB22N60E-GE3 DISTI # XSKDRABV0051360	Vishay Intertechnologies	RoHS: Compliant	800 in Stock0 on Order	800:$2.4400 250:$2.6200
SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas - 46200	50:$2.6850 100:$2.4360 250:$2.2160 500:$2.1440 1000:$1.9360
SIHB22N60E-GE3 DISTI # 2079772	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK	3987	500:£2.1000 250:£2.5400 100:£2.6000 10:£3.1700 1:£3.9700
SIHB22N60E-GE3 DISTI # 2079772	Vishay Intertechnologies	MOSFET, N CH, 600V, 21A, D2PAK RoHS: Compliant	1939	3000:$3.1300 1000:$3.2800 100:$4.5700 25:$5.2700 10:$5.5800 1:$6.2100

관련 상품

영상	부분 #	설명
	Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3	MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
	Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60EL-GE3 OMO.#: OMO-SIHB22N60EL-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N65E-GE3 OMO.#: OMO-SIHB22N65E-GE3	MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60ET5-GE3 OMO.#: OMO-SIHB22N60ET5-GE3	MOSFET 600V Vds E Series D2PAK TO-263
	Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3	MOSFET 600V Vds E Series D2PAK TO-263
	Mfr.#: SIHB22N65E-GE3 OMO.#: OMO-SIHB22N65E-GE3-VISHAY	RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
	Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3-VISHAY	MOSFET N-CH 600V 20A D2PAK
	Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3-VISHAY	MOSFET N-CH 600V 21A D2PAK
	Mfr.#: SIHB22N60SE3 OMO.#: OMO-SIHB22N60SE3-1190	Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB