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IPB100N06S205ATMA4

IPB100N06S205ATMA4
Mfr. #:
IPB100N06S205ATMA4
제조사:
Infineon Technologies
설명:
MOSFET N-CH 55V 100A TO263-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB100N06S205ATMA4 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IPB100N06S205ATMA4 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
릴
부분 별칭
IPB100N06S2-05 SP001067896
패키지 케이스
TO-263-3
기술
시
채널 수
1 Channel
트랜지스터형
1 N-Channel
트랜지스터 극성
N-채널
Tags
IPB100N06S2, IPB100N06, IPB100N0, IPB100N, IPB100, IPB10, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 4.7 mOhm 130 nC OptiMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 100A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 55V 100A TO263-3
***ronik
N-CH 55V 100A 4,7mOhm TO263-3
***ark
MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 55V, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:55V; Resistenza di Attivazione Rds(on):0.0037ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB100N06S205ATMA4
DISTI # 30746910		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive T/R3000
  • 1000:$1.1712
IPB100N06S205ATMA4
DISTI # 27506057		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive T/R1000
  • 1000:$1.7600
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4CT-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1394In Stock
  • 500:$1.8814
  • 100:$2.4190
  • 10:$3.0100
  • 1:$3.3300
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4DKR-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1394In Stock
  • 500:$1.8814
  • 100:$2.4190
  • 10:$3.0100
  • 1:$3.3300
IPB100N06S205ATMA4
DISTI # IPB100N06S205ATMA4TR-ND		Infineon Technologies AGMOSFET N-CH 55V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.5135
IPB100N06S205ATMA4
DISTI # C1S322000611197		Infineon Technologies AGTrans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		7000
  • 1000:$1.4600
IPB100N06S205ATMA4
DISTI # 34AC1653		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes922
  • 1:$2.8000
  • 10:$2.3800
  • 25:$2.2200
  • 50:$2.0600
  • 100:$1.9000
  • 250:$1.7900
  • 500:$1.6700
IPB100N06S205ATMA4Infineon Technologies AGSingle N-Channel 55 V 4.7 mOhm 130 nC OptiMOS Power Mosfet - D2PAK
RoHS: Compliant		1000Reel
  • 1000:$1.3500
IPB100N06S205ATMA4
DISTI # 726-IPB100N06S205ATM		Infineon Technologies AGMOSFET N-CHANNEL_55/60V
RoHS: Compliant		1010
  • 1:$2.8000
  • 10:$2.3800
  • 100:$1.9000
  • 500:$1.6700
  • 1000:$1.3800
  • 2000:$1.2900
  • 5000:$1.2400
IPB100N06S205ATMA4Infineon Technologies AG 
RoHS: Not Compliant		9000
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
IPB100N06S205ATMA4
DISTI # XSFP00000140895		Infineon Technologies AG 
RoHS: Compliant		1346
  • 1000:$1.8000
  • 1346:$1.6900
IPB100N06S205ATMA4
DISTI # 2781066		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263
RoHS: Compliant		922
  • 1:£2.8400
  • 10:£2.2800
  • 100:£1.8300
  • 250:£1.6300
  • 500:£1.4200
IPB100N06S205ATMA4
DISTI # 2781066		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 55V, TO-263
RoHS: Compliant		922
  • 1:$2.9300
  • 10:$2.7400
  • 100:$2.4200
  • 250:$2.2900
  • 500:$2.1700
  • 1000:$2.0600
영상 부분 # 설명
IPB100N06S205ATMA4

Mfr.#: IPB100N06S205ATMA4

OMO.#: OMO-IPB100N06S205ATMA4

 MOSFET N-CHANNEL_55/60V
IPB100N06S3-04

Mfr.#: IPB100N06S3-04

OMO.#: OMO-IPB100N06S3-04

 MOSFET N-Ch 55V 100A D2PAK-2
IPB100N06S3L-03

Mfr.#: IPB100N06S3L-03

OMO.#: OMO-IPB100N06S3L-03

 MOSFET N-Ch 55V 100A D2PAK-2
IPB100N06S205ATMA4

Mfr.#: IPB100N06S205ATMA4

OMO.#: OMO-IPB100N06S205ATMA4-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S2L05ATMA2

Mfr.#: IPB100N06S2L05ATMA2

OMO.#: OMO-IPB100N06S2L05ATMA2-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S2L-05

Mfr.#: IPB100N06S2L-05

OMO.#: OMO-IPB100N06S2L-05-1190

 Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) TO-263 (Alt: IPB100N06S2L-05)
IPB100N06S2L05ATMA1

Mfr.#: IPB100N06S2L05ATMA1

OMO.#: OMO-IPB100N06S2L05ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3
IPB100N06S3L-03

Mfr.#: IPB100N06S3L-03

OMO.#: OMO-IPB100N06S3L-03-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO263-3-2
IPB100N06S3L-04

Mfr.#: IPB100N06S3L-04

OMO.#: OMO-IPB100N06S3L-04-INFINEON-TECHNOLOGIES

 MOSFET N-CH 55V 100A TO-263
IPB100N06S2-05

Mfr.#: IPB100N06S2-05

OMO.#: OMO-IPB100N06S2-05-317

 RF Bipolar Transistors MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS
유효성
재고:
Available
주문 시:
3000
수량 입력:
IPB100N06S205ATMA4의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.76
US$1.76
10
US$1.67
US$16.69
100
US$1.58
US$158.11
500
US$1.49
US$746.65
1000
US$1.41
US$1 405.40
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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