MJD117RLG

Mfr. #:: MJD117RLG
제조사:: ON Semiconductor
설명:: Darlington Transistors BIP DPAK PNP 2A 100V TR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MJD117RLG 데이터 시트
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HTML Datasheet:: MJD117RLG Datasheet MJD117RLG Datasheet (P4-P6)MJD117RLG Datasheet (P7-P9)MJD117RLG Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 달링턴 트랜지스터

RoHS:: Y

구성:: 하나의

트랜지스터 극성:: PNP

컬렉터-이미터 전압 VCEO 최대:: 100 V

이미터-베이스 전압 VEBO:: 5 V

컬렉터-베이스 전압 VCBO:: 100 V

최대 DC 수집기 전류:: 2 A

최대 수집기 차단 전류:: 20 uA

장착 스타일:: SMD/SMT

패키지/케이스:: 디팍

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

시리즈:: MJD117

포장:: 릴

키:: 2.38 mm

길이:: 6.73 mm

너비:: 6.22 mm

상표:: 온세미컨덕터

DC 수집기/기본 이득 hfe 최소:: 500

상품 유형:: 달링턴 트랜지스터

공장 팩 수량:: 1800

하위 카테고리:: 트랜지스터

단위 무게:: 0.009185 oz

Tags: MJD117, MJD11, MJD1, MJD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MJD117RLG 설명

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

***emi: 2.0 A, 100 V PNP Darlington Bipolar Power Transistor

***ark: Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:100V; Transition Frequency Typ, ft:25MHz; Power Dissipation, Pd:20000mW; DC Collector Current:-2A; DC Current Gain Max (hfe):1000 ;RoHS Compliant: Yes

***ark: Transistor,Bjt,Darlington,Pnp,100V V(Br)Ceo,2A I(C),To-252 Rohs Compliant: Yes

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

***ure Electronics: KSH117 Series 100 V 2 A PNP SMT Silicon Darlington Transistor - TO-252-3

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

***emi: 2.0 A, 100 V PNP Darlington Bipolar Power Transistor

***ure Electronics: MJD Series 100 V 2 A PNP Complementary Darlington Power Transistor - TO-252-3

***(Formerly Allied Electronics): Transistor, Darlington,Si,PNP,Power, Switch,Vo 100VDC,VI 5VDC,Io 2ADC,PD 20W

***nell: BIPOLAR, TRANSISTOR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 2A; DC Current Gain hFE: 12hFE; Transistor Case Style:

***ark: Darlington Transistor, Pnp, -100V, D-Pak; Transistor Polarity:pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:2A; Power Dissipation:1.75W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes

***r Electronics: Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

***emi: 2.0 A, 100 V PNP Darlington Bipolar Power Transistor

***ure Electronics: MJD Series 100 V 2 A PNP Complementary Darlington Power Transistor - TO-252-3

*** Source Electronics: Trans Darlington PNP 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP DARL 100V 2A DPAK

***nell: TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 1.75W; DC Collector Current: -2A; DC Current Gain hFE: 200hFE; Tra

***ark: Darlington Transistor, Pnp, -100V, D-Pak, Full Reel; Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Dc Collector Current:-2A; Power Dissipation Pd:1.75W; Transistor Mounting:surface Mount; No. Of Pins:4Pins Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
MJD117RLG DISTI # MJD117RLG-ND	ON Semiconductor	TRANS PNP DARL 100V 2A DPAK RoHS: Compliant Min Qty: 1800 Container: Tape & Reel (TR)	Limited Supply - Call
MJD117RLG DISTI # 863-MJD117RLG	ON Semiconductor	Darlington Transistors BIP DPAK PNP 2A 100V TR RoHS: Compliant	0
MJD117RLG	ON Semiconductor	RoHS: Not Compliant	1800	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600

영상	부분 #	설명
	Mfr.#: MJD112G OMO.#: OMO-MJD112G	Darlington Transistors 2A 100V Bipolar Power NPN
	Mfr.#: MJD18002D2T4G OMO.#: OMO-MJD18002D2T4G	Bipolar Transistors - BJT BIP NPN 2A 450V TR F
	Mfr.#: MJD112-1 OMO.#: OMO-MJD112-1-1190	Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin
	Mfr.#: MJD18002D2 OMO.#: OMO-MJD18002D2-1190	신규 및 오리지널
	Mfr.#: MJD18002D2T4 OMO.#: OMO-MJD18002D2T4-1190	신규 및 오리지널
	Mfr.#: MJD127-1G OMO.#: OMO-MJD127-1G-1190	신규 및 오리지널
	Mfr.#: MJD117-1G OMO.#: OMO-MJD117-1G-ON-SEMICONDUCTOR	Darlington Transistors 2A 100V Bipolar Power PNP
	Mfr.#: MJD127T4G OMO.#: OMO-MJD127T4G-ON-SEMICONDUCTOR	Darlington Transistors 8A 100V Bipolar Power PNP
	Mfr.#: MJD127TF OMO.#: OMO-MJD127TF-ON-SEMICONDUCTOR	TRANS PNP DARL 100V 8A DPAK
	Mfr.#: MJD127T4 OMO.#: OMO-MJD127T4-STMICROELECTRONICS	Darlington Transistors PNP Power Darlington

MJD117RLG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes