IPD80R1K4CEATMA1

IPD80R1K4CEATMA1
Mfr. #:
IPD80R1K4CEATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 800V 3.9A DPAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD80R1K4CEATMA1 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
IPD80R1K4CEATMA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
XPD80R1
포장
부분 별칭
IPD80R1K4CE SP001130972
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
쿨모스
패키지 케이스
TO-252-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
63 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
12 ns
상승 시간
15 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
3.9 A
Vds-드레인-소스-고장-전압
800 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
1.4 Ohms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
72 ns
일반 켜기 지연 시간
25 ns
Qg-Gate-Charge
23 nC
Tags
IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
부분 # 제조 설명 재고 가격
IPD80R1K4CEATMA1
DISTI # V72:2272_06383758
Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.4802
  • 500:$0.5896
  • 250:$0.6425
  • 100:$0.6647
  • 25:$0.8239
  • 10:$0.8339
  • 1:$0.9540
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7146In Stock
  • 1000:$0.6069
  • 500:$0.7687
  • 100:$0.9912
  • 10:$1.2540
  • 1:$1.4200
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 3.9A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
5000In Stock
  • 2500:$0.5499
IPD80R1K4CEATMA1
DISTI # 26899231
Infineon Technologies AGTrans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R2450
  • 1000:$0.5060
  • 500:$0.5901
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 15:$0.8408
IPD80R1K4CEATMA1
DISTI # IPD80R1K4CEATMA1
Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5139
  • 5000:$0.4949
  • 10000:$0.4779
  • 15000:$0.4609
  • 25000:$0.4529
IPD80R1K4CEATMA1
DISTI # SP001130972
Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R (Alt: SP001130972)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.7819
  • 5000:€0.6099
  • 10000:€0.5449
  • 15000:€0.4959
  • 25000:€0.4649
IPD80R1K4CEATMA1
DISTI # 13AC9051
Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$1.1800
  • 10:$1.0000
  • 25:$0.9230
  • 50:$0.8450
  • 100:$0.7680
  • 250:$0.7240
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 726-IPD80R1K4CEATMA1
Infineon Technologies AGMOSFET N-Ch 800V 3.9A DPAK-243861
  • 1:$1.1800
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
IPD80R1K4CEATMA1
DISTI # 2726058
Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant
1324
  • 1:$2.2500
  • 10:$1.9900
  • 100:$1.5700
IPD80R1K4CEATMA1
DISTI # C1S322000579253
Infineon Technologies AGMOSFETs
RoHS: Compliant
2450
  • 250:$0.6796
  • 100:$0.6814
  • 25:$0.8258
  • 10:$0.8408
IPD80R1K4CEATMA1
DISTI # XSFP00000152672
Infineon Technologies AGHalf Bridge Based MOSFET Driver, 0.35A, CMOS,PDSO14
RoHS: Compliant
21872
  • 2500:$1.1900
  • 21872:$1.0800
IPD80R1K4CEATMA1
DISTI # 2726058
Infineon Technologies AGMOSFET, N-CH, 800V, 3.9A, TO-252-3
RoHS: Compliant
1514
  • 5:£0.8500
  • 25:£0.7650
  • 100:£0.5870
  • 250:£0.5530
  • 500:£0.5190
영상 부분 # 설명
IPD80R1K4P7ATMA1

Mfr.#: IPD80R1K4P7ATMA1

OMO.#: OMO-IPD80R1K4P7ATMA1

MOSFET
IPD80R1K4CEATMA1

Mfr.#: IPD80R1K4CEATMA1

OMO.#: OMO-IPD80R1K4CEATMA1

MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K4CEBTMA1

Mfr.#: IPD80R1K4CEBTMA1

OMO.#: OMO-IPD80R1K4CEBTMA1

MOSFET N-Ch 800V 3.9A DPAK-2
IPD80R1K0CE

Mfr.#: IPD80R1K0CE

OMO.#: OMO-IPD80R1K0CE-1190

Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
IPD80R1K0CEATMA1

Mfr.#: IPD80R1K0CEATMA1

OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 5.7A TO252-3
IPD80R1K0CEBTMA1 , 2SD24

Mfr.#: IPD80R1K0CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190

신규 및 오리지널
IPD80R1K2P7ATMA1

Mfr.#: IPD80R1K2P7ATMA1

OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 4.5A TO252-3
IPD80R1K4CEBTMA1 , 2SD24

Mfr.#: IPD80R1K4CEBTMA1 , 2SD24

OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

신규 및 오리지널
IPD80R1K4P7ATMA1

Mfr.#: IPD80R1K4P7ATMA1

OMO.#: OMO-IPD80R1K4P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 4A DPAK
IPD80R1K0CEBTMA1

Mfr.#: IPD80R1K0CEBTMA1

OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 800V 5.7A DPAK-2
유효성
재고:
Available
주문 시:
3500
수량 입력:
IPD80R1K4CEATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.68
US$0.68
10
US$0.65
US$6.45
100
US$0.61
US$61.14
500
US$0.58
US$288.70
1000
US$0.54
US$543.50
시작
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