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RS1E130GNTB

RS1E130GNTB
Mfr. #:
RS1E130GNTB
제조사:
Rohm Semiconductor
설명:
MOSFET 4.5V Drive Nch MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RS1E130GNTB 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RS1E130GNTB 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
HSOP-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
13 A
Rds On - 드레인 소스 저항:
11.7 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
7.9 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
3 W
구성:
하나의
포장:
릴
트랜지스터 유형:
1 N-Channel
상표:
로옴 반도체
순방향 트랜스컨덕턴스 - 최소:
8 S
가을 시간:
3.1 ns
상품 유형:
MOSFET
상승 시간:
4.3 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
22.4 ns
일반적인 켜기 지연 시간:
8.4 ns
부품 번호 별칭:
RS1E130GN
단위 무게:
0.002490 oz
Tags
RS1E130G, RS1E13, RS1E1, RS1E, RS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R
***et
4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE
***
4.5V N-CHANNEL
***(Formerly Allied Electronics)
IRF8714PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC
***roFlash
Single N-Channel 30 V 8.7 mOhm 8.1 nC HEXFET® Power Mosfet - SOIC-8
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation P
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0069Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ure Electronics
N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ
***nell
MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
***rchild Semiconductor
The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***emi
Single N-Channel Power MOSFET 30V, 40A, 9.4mΩ
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V Rohs Compliant: Yes
***nell
MOSFET, AEC-Q101, N-CH, 30V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 26W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
N-Channel Power Trench® MOSFET 30V, 13.3A, 8.5mΩ
***ure Electronics
Single N-Channel 30 V 2.3 W 29 nC PowerTrench Surface Mount Mosfet - MLP-3.3x3.3
***nell
MOSFET, N CH, 30V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
부분 # 제조 설명 재고 가격
RS1E130GNTB
DISTI # C1S625901169847		ROHM SemiconductorTrans MOSFET N-CH 30V 13A Automotive 8-Pin HSOP EP T/R
RoHS: Compliant		40
  • 10:$0.1820
RS1E130GNTB
DISTI # RS1E130GNTBCT-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2290In Stock
  • 1000:$0.2084
  • 500:$0.2697
  • 100:$0.3432
  • 10:$0.4600
  • 1:$0.5400
RS1E130GNTB
DISTI # RS1E130GNTBDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2290In Stock
  • 1000:$0.2084
  • 500:$0.2697
  • 100:$0.3432
  • 10:$0.4600
  • 1:$0.5400
RS1E130GNTB
DISTI # RS1E130GNTBTR-ND		ROHM SemiconductorMOSFET N-CH 30V 13A 8-HSOP
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.1583
  • 12500:$0.1606
  • 5000:$0.1726
  • 2500:$0.1845
RS1E130GNTB
DISTI # RS1E130GNTB		ROHM Semiconductor4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E130GNTB)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
    RS1E130GNTB
    DISTI # 755-RS1E130GNTB    		ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		1960
    • 1:$0.5100
    • 10:$0.4300
    • 100:$0.2620
    • 1000:$0.2030
    • 2500:$0.1730
    • 10000:$0.1610
    • 25000:$0.1530
    • 50000:$0.1490
    RS1E130GNTBROHM Semiconductor 33
    • 21:$0.7500
    • 5:$1.0000
    • 1:$1.2500
    RS1E130GNTBROHM Semiconductor 100
    • 1:¥5.3321
    • 100:¥3.0233
    • 1250:¥1.9168
    • 2500:¥1.4280
    RS1E130GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant    		Americas -
      RS1E130GNTBROHM SemiconductorRoHS(ship within 1day)42
      • 1:$0.9900
      • 10:$0.5800
      • 50:$0.3600
      • 100:$0.3100
      • 500:$0.2600
      • 1000:$0.2500
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      유효성
      재고:
      Available
      주문 시:
      1984
      수량 입력:
      RS1E130GNTB의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.51
      US$0.51
      10
      US$0.43
      US$4.30
      100
      US$0.26
      US$26.20
      1000
      US$0.20
      US$203.00
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