RS1E130G

RS1E130GNTB vs RS1E130GN vs RS1E130GNFU7TB

 
PartNumberRS1E130GNTBRS1E130GNRS1E130GNFU7TB
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseHSOP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance11.7 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Forward Transconductance Min8 S--
Fall Time3.1 ns--
Product TypeMOSFET--
Rise Time4.3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22.4 ns--
Typical Turn On Delay Time8.4 ns--
Part # AliasesRS1E130GN--
Unit Weight0.002490 oz--
제조사 부분 # 설명 RFQ
RS1E130GNTB MOSFET 4.5V Drive Nch MOSFET
RS1E130GN 신규 및 오리지널
RS1E130GNFU7TB 신규 및 오리지널
RS1E130GNTB MOSFET N-CH 30V 13A 8-HSOP
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