SIHD7N60EGE3

Mfr. #:: SIHD7N60EGE3
제조사:: Vishay Intertechnologies
설명:: Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHD7N60EGE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

Tags: SIHD7, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
SIHD7N60E-GE3 DISTI # V99:2348_09218416	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	3000	5000:$0.8775 2500:$0.9173 1000:$0.9386 500:$1.1127 100:$1.2602 10:$1.6590 1:$2.1913
SIHD7N60E-GE3 DISTI # V36:1790_09218416	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	0	3000000:$0.8836 1500000:$0.8861 300000:$1.1050 30000:$1.4870 3000:$1.5500
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 7A TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	1355In Stock	5000:$0.8845 2500:$0.9185 1000:$0.9866 500:$1.1907 100:$1.4493 10:$1.8030 1:$2.0100
SIHD7N60E-GE3 DISTI # 27527136	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant	3000	7:$2.1913
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3) RoHS: Compliant Min Qty: 3000	Europe - 2475	30000:€0.7659 18000:€0.8009 12000:€0.9059 6000:€1.1169 3000:€1.5569
SIHD7N60E-GE3 DISTI # SIHD7N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SIHD7N60E-GE3 DISTI # 63W4108	Vishay Intertechnologies	Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes	2593	500:$1.1400 100:$1.3000 50:$1.4300 25:$1.5600 10:$1.6900 1:$2.0300
SIHD7N60E-GE3 DISTI # 78-SIHD7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	1048	1:$2.0100 10:$1.6700 100:$1.2900 500:$1.1300
SIHD7N60E-E3 DISTI # 78-SIHD7N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	0	3000:$0.8750 6000:$0.8430 9000:$0.8100
SIHD7N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	3000
SIHD7N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	Americas - 3000	50:$1.2450 100:$1.1020 250:$1.0020 500:$0.9800 1000:$0.9260
SIHD7N60E-GE3 DISTI # 2283642	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, DPAK RoHS: Compliant	2293	5000:$1.3700 2500:$1.3900 1000:$1.4900 500:$1.8000 100:$2.1900 10:$2.7200 1:$3.0300
SIHD7N60E-GE3 DISTI # XSKDRABV0041556	Vishay Intertechnologies	RoHS: Compliant	2400 in Stock0 on Order	2400:$1.0700 435:$1.1500
SIHD7N60E-GE3 DISTI # 2283642	Vishay Intertechnologies	MOSFET, N-CH, 600V, 7A, DPAK	2304	500:£0.7760 250:£0.8330 100:£0.8880 25:£1.1500 5:£1.3900

관련 상품

영상	부분 #	설명
	Mfr.#: SIHD7N60ET1-GE3 OMO.#: OMO-SIHD7N60ET1-GE3	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3	MOSFET 600V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3	MOSFET 600V Vds 30V Vgs DPAK (TO-252)
	Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3-VISHAY	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60E-GE3-CUT TAPE OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SIHD7N60E OMO.#: OMO-SIHD7N60E-1190	신규 및 오리지널
	Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190	Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY	MOSFET N-CH 600V 7A TO252AA
	Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY	MOSFET N-CH 600V 7A TO252AA

유효성

재고:: Available
주문 시:: 4500
수량 입력:

SIHD7N60EGE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.00~~; ~~US$0.00~~

10: ~~US$0.00~~; ~~US$0.00~~

100: ~~US$0.00~~; ~~US$0.00~~

500: ~~US$0.00~~; ~~US$0.00~~

1000: ~~US$0.00~~; ~~US$0.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SIHD7 11
SIHD 46
SIH 797

SIHD7N60EGE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes