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| PartNumber | SIHD7N60E-GE3 | SIHD7N60E-E3 | SIHD7N60ET-GE3 |
| Description | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 7 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 600 mOhms | 600 mOhms | 600 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 20 nC | 20 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 78 W | 78 W | 78 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Series | E | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 14 ns | 14 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 13 ns | 13 ns |
| Factory Pack Quantity | 3000 | 3000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24 ns | 24 ns | 24 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Part # Aliases | - | SIHD7N60E | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHD7N60ET1-GE3 | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHD7N60E-GE3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD7N60ET4-GE3 | MOSFET 600V Vds E Series DPAK TO-252 | ||
| SIHD7N60E-E3 | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | ||
| SIHD7N60ET-GE3 | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHD7N60ET5-GE3 | MOSFET 600V Vds E Series DPAK TO-252 | ||
| SIHD7N60ETR-GE3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHD7N60ETL-GE3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHD7N60ET-GE3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHD7N60E-GE3-CUT TAPE | 신규 및 오리지널 | ||
| SIHD7N60E | 신규 및 오리지널 | ||
| SIHD7N60EGE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
Vishay |
SIHD7N60E-E3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | |
| SIHD7N60E-GE3 | MOSFET N-CH 600V 7A TO-252 | ||
| SIHD7N60ET4-GE3 | MOSFET N-CH 600V 7A TO252AA | ||
| SIHD7N60ET5-GE3 | MOSFET N-CH 600V 7A TO252AA |