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SI3430DV-T1-E3

SI3430DV-T1-E3
Mfr. #:
SI3430DV-T1-E3
제조사:
Vishay
설명:
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI3430DV-T1-E3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI3430DV-T1-E3 추가 정보
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
-
포장
Digi-ReelR 대체 패키징
부분 별칭
SI3430DV-E3
단위 무게
0.000705 oz
장착 스타일
SMD/SMT
패키지 케이스
SOT-23-6 Thin, TSOT-23-6
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
6-TSOP
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
1.14W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
100V
입력-커패시턴스-Ciss-Vds
-
FET 기능
기준
Current-Continuous-Drain-Id-25°C
1.8A (Ta)
Rds-On-Max-Id-Vgs
170 mOhm @ 2.4A, 10V
Vgs-th-Max-Id
2V @ 250μA (Min)
Gate-Charge-Qg-Vgs
6.6nC @ 10V
Pd 전력 손실
1.14 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
11 ns
상승 시간
11 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
2.4 A
Vds-드레인-소스-고장-전압
100 V
Rds-On-Drain-Source-Resistance
170 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
16 ns
일반 켜기 지연 시간
9 ns
채널 모드
상승
Tags
SI3430, SI343, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
***Components
MOSFET N-Channel 100V 1.8A TSOP6
***i-Key
MOSFET N-CH 100V 1.8A 6-TSOP
***ronik
N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf
***ser
N-Channel MOSFETs 100V 8A 2W
***ponent Sense
MOSFET 100V 8A 2W
***ied Electronics & Automation
TRANSITOR, SI2323DS
***
100V, 170 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI3430DV-T1-E3
DISTI # V72:2272_07433160		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
RoHS: Compliant		49
  • 25:$0.8309
  • 10:$0.8590
  • 1:$0.9585
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 1.8A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 1
Container: Cut Tape		Americas - 61
  • 1:$0.8579
  • 30:$0.8069
  • 75:$0.8049
  • 150:$0.7699
  • 375:$0.6689
  • 750:$0.5459
  • 1500:$0.5439
SI3430DV-T1-E3
DISTI # SI3430DV-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5239
  • 6000:$0.5079
  • 12000:$0.4869
  • 18000:$0.4739
  • 30000:$0.4609
SI3430DV-T1-E3
DISTI # 06J7594		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes0
  • 1:$1.2100
  • 10:$1.0700
  • 25:$0.9980
  • 50:$0.9230
  • 100:$0.8480
  • 500:$0.6570
  • 1000:$0.5190
SI3430DV-T1-E3
DISTI # 65K1923		Vishay IntertechnologiesN CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3.
DISTI # 15AC0293		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No0
  • 1:$0.4700
  • 3000:$0.4700
SI3430DV-T1-E3
DISTI # 781-SI3430DV-E3		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Compliant		360
  • 1:$1.2600
  • 10:$1.0400
  • 100:$0.7940
  • 500:$0.6820
  • 1000:$0.6000
  • 3000:$0.5990
SI3430DV-T1
DISTI # 781-SI3430DV		Vishay IntertechnologiesMOSFET 100V 8A 2W
RoHS: Not compliant		0
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET16
    • 5:$1.0820
    • 1:$1.3525
    SI3430DV-T1-E3Vishay Intertechnologies1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET292
    • 81:$0.4500
    • 18:$0.7500
    • 1:$1.5000
    SI3430DV-T1-E3Vishay BLH 365
    • 5:$1.1250
    • 19:$0.7313
    • 70:$0.4219
    • 239:$0.3600
    SI3430DV-T1-E3.Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - 530
    • 10:$0.7040
    SI3430DV-T1-E3Vishay IntertechnologiesMOSFET 100V 8A 2W
    RoHS: Compliant    		Americas - Stock
      SI3430DV-T1-E3
      DISTI # C1S803600844371      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		49
      • 25:$0.8309
      • 10:$0.8590
      영상 부분 # 설명
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3

      		 MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3

      		 MOSFET 100V, 170 MOHMS@10V
      SI3430DV-T1-GE3

      Mfr.#: SI3430DV-T1-GE3

      OMO.#: OMO-SI3430DV-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
      SI3430DV

      Mfr.#: SI3430DV

      OMO.#: OMO-SI3430DV-1190

      		 신규 및 오리지널
      SI3430DV-T1-E3

      Mfr.#: SI3430DV-T1-E3

      OMO.#: OMO-SI3430DV-T1-E3-VISHAY

      		 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
      유효성
      재고:
      Available
      주문 시:
      4000
      수량 입력:
      SI3430DV-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.54
      US$0.54
      10
      US$0.51
      US$5.13
      100
      US$0.49
      US$48.60
      500
      US$0.46
      US$229.50
      1000
      US$0.43
      US$432.00
      시작
      Top