SI3430DV-T1-GE3

Mfr. #:: SI3430DV-T1-GE3
제조사:: Vishay
설명:: IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI3430DV-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SI3430DV-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: IC 칩

포장: 릴

부분 별칭: SI3430DV-GE3

단위 무게: 0.000705 oz

장착 스타일: SMD/SMT

패키지 케이스: TSOP-6

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 1.14 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9 ns

상승 시간: 11 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 2.4 A

Vds-드레인-소스-고장-전압: 100 V

Rds-On-Drain-Source-Resistance: 170 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 16 ns

일반 켜기 지연 시간: 9 ns

채널 모드: 상승

Tags: SI3430, SI343, SI34, SI3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-GE3 설명

***ical: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***nell: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6

***ment14 APAC: N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

SI3430DV-T1-GE3 추가 정보

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI3430DV-T1-GE3 DISTI # 21256746	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	838	500:$0.2214 323:$0.2246
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1159In Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4500
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4659 6000:$0.4639 12000:$0.4629 18000:$0.4609 30000:$0.4599
SI3430DV-T1-GE3 DISTI # SI3430DV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: SI3430DV-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.6869 10:€0.4689 25:€0.4029 50:€0.3719 100:€0.3579 500:€0.3529 1000:€0.3469
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 26R1863) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2600 25:$1.0400 50:$0.9170 100:$0.7940 250:$0.7380 500:$0.6820 1000:$0.5390
SI3430DV-T1-GE3 DISTI # 26R1863	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	838	1:$0.1550 25:$0.1550 50:$0.1550 100:$0.1550 250:$0.1550 500:$0.1550 1000:$0.1550
SI3430DV-T1-GE3 DISTI # 15R4923	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2W , RoHS Compliant: Yes	0	1:$0.5100 3000:$0.5070 6000:$0.4830 12000:$0.4270
SI3430DV-T1-GE3 DISTI # 781-SI3430DV-GE3	Vishay Intertechnologies	MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant	3280	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.5390 3000:$0.5030 6000:$0.4780 9000:$0.4670
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:$1.9800
SI3430DV-T1-GE3 DISTI # 1871903	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1:£1.1100 25:£0.9210 50:£0.8130 100:£0.7030 250:£0.6530

영상	부분 #	설명
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	신규 및 오리지널
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

SI3430DV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes