SIDR140DP-T1-GE3

SIDR140DP-T1-GE3
Mfr. #:
SIDR140DP-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIDR140DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR140DP-T1-GE3 DatasheetSIDR140DP-T1-GE3 Datasheet (P4-P6)SIDR140DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIDR140DP-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-SO-8DC-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
25 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
670 uOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
20 V, - 16 V
Qg - 게이트 차지:
170 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET
포장:
시리즈:
SID
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
90 S
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
46 ns
일반적인 켜기 지연 시간:
19 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
부분 # 제조 설명 재고 가격
SIDR140DP-T1-GE3
DISTI # V99:2348_22587800
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.0786
  • 500:$1.3860
  • 100:$1.5526
  • 10:$2.0366
  • 1:$2.6928
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
18In Stock
  • 1000:$1.2491
  • 500:$1.5075
  • 100:$1.8348
  • 10:$2.2830
  • 1:$2.5400
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 25V PPAK SO-8DC
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$1.1151
  • 3000:$1.1290
SIDR140DP-T1-GE3
DISTI # 31059629
Vishay IntertechnologiesN-Channel 25 V (D-S) MOSFET PowerPAK SO-8 double cooling 1G SG 2mil , 0.67 m @ 10V m @ 7.5V 0.9 m @5990
  • 3000:$1.1019
  • 500:$1.3471
  • 100:$1.5523
  • 10:$2.0165
  • 6:$2.6929
SIDR140DP-T1-GE3
DISTI # SIDR140DP-T1-GE3
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET - Tape and Reel (Alt: SIDR140DP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$1.0209
  • 30000:$1.0489
  • 18000:$1.0789
  • 12000:$1.1249
  • 6000:$1.1589
SIDR140DP-T1-GE3
DISTI # 81AC3428
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.9960
  • 6000:$1.0400
  • 4000:$1.0800
  • 2000:$1.2000
  • 1000:$1.2600
  • 1:$1.3400
SIDR140DP-T1-GE3
DISTI # 99AC9550
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.00054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes50
  • 500:$1.4000
  • 250:$1.5000
  • 100:$1.6100
  • 50:$1.7600
  • 25:$1.9200
  • 10:$2.0700
  • 1:$2.4900
SIDR140DP-T1-GE3
DISTI # 78-SIDR140DP-T1-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20/-16V Vgs PowerPAK SO-8DC
RoHS: Compliant
5477
  • 1:$2.4700
  • 10:$2.0500
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 3000:$1.0700
  • 6000:$1.0300
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO
RoHS: Compliant
50
  • 1000:$1.4900
  • 500:$1.6100
  • 250:$1.7800
  • 100:$1.9100
  • 10:$2.4000
  • 1:$3.1100
SIDR140DP-T1-GE3
DISTI # 3019067
Vishay IntertechnologiesMOSFET, N-CH, 100A, 25V, POWERPAK SO50
  • 500:£0.9960
  • 250:£1.1000
  • 100:£1.1800
  • 10:£1.4900
  • 1:£1.9300
영상 부분 # 설명
DGD0506AFN-7

Mfr.#: DGD0506AFN-7

OMO.#: OMO-DGD0506AFN-7

Gate Drivers HV Gate Driver
MMBD1404

Mfr.#: MMBD1404

OMO.#: OMO-MMBD1404

Diodes - General Purpose, Power, Switching High Voltage General Purpose
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3

MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK SO-8DC
RSS100N03FRATB

Mfr.#: RSS100N03FRATB

OMO.#: OMO-RSS100N03FRATB

MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
FDMS8050ET30

Mfr.#: FDMS8050ET30

OMO.#: OMO-FDMS8050ET30

MOSFET FET 30V 0.65 MOHM PQFN56
PIC16F15344-E/GZ

Mfr.#: PIC16F15344-E/GZ

OMO.#: OMO-PIC16F15344-E-GZ

8-bit Microcontrollers - MCU 7KB, 512B RAM, 4xPWMs, Comparator, DAC, ADC, CWG, 2 EUSART, SPI/I2C
SIRA90DP-T1-GE3

Mfr.#: SIRA90DP-T1-GE3

OMO.#: OMO-SIRA90DP-T1-GE3

MOSFET 30V Vds 100A Id Qg 48nC Typ.
SIDR626DP-T1-GE3

Mfr.#: SIDR626DP-T1-GE3

OMO.#: OMO-SIDR626DP-T1-GE3-VISHAY

MOSFET N-CHAN 60V
SIDR680DP-T1-GE3

Mfr.#: SIDR680DP-T1-GE3

OMO.#: OMO-SIDR680DP-T1-GE3-VISHAY

MOSFET N-CH 80V
유효성
재고:
Available
주문 시:
1988
수량 입력:
SIDR140DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.47
US$2.47
10
US$2.05
US$20.50
100
US$1.59
US$159.00
500
US$1.39
US$695.00
1000
US$1.15
US$1 150.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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