FJBE2150D

Mfr. #:: FJBE2150D
제조사:: Fairchild Semiconductor
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FJBE2150D 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: 트랜지스터 - 바이폴라(BJT) - RF

포장: 튜브

단위 무게: 0.066315 oz

장착 스타일: SMD/SMT

패키지 케이스: D2PAK-2

구성: 하나의

Pd 전력 손실: 110 W

최대 작동 온도: + 125 C

최소 작동 온도: - 55 C

컬렉터-이미터-전압-VCEO-최대: 800 V

트랜지스터 극성: NPN

컬렉터-이미터-포화-전압: 0.25 V

컬렉터-베이스-전압-VCBO: 1.25 kV

이미 터-베이스-전압-VEBO: 12 V

최대 DC 수집기 전류: 2 A

이득-대역폭-곱-fT: 5 MHz

연속 수집기 전류: 0.5 A

DC-수집기-베이스-이득-hfe-Min: 20

DC-전류-이득-hFE-최대: 35

Tags: FJB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FJBE2150D 설명

***Semiconductor: ESBC™ Rated NPN Silicon Transistor

***rchild Semiconductor: The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1250 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.

Market price

부분 #	제조	설명	재고	가격
FJBE2150DTU DISTI # FJBE2150DTU-ND	ON Semiconductor	TRANS NPN 800V 2A D2-PAK-2L RoHS: Compliant Container: Tube	Limited Supply - Call
FJBE2150DTU DISTI # FJBE2150DTU	ON Semiconductor	Trans GP BJT NPN 800V 2A 3-Pin D2PAK Tube (Alt: FJBE2150DTU) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.1079 10:€0.9849 25:€0.8869 50:€0.8059 100:€0.7389 500:€0.6819 1000:€0.6329
FJBE2150DTU DISTI # 96W6437	ON Semiconductor	NPN/1250V/3A / RAIL	0	1:$1.5500 10:$1.2500 100:$1.0000 500:$0.8750 1000:$0.7250 2500:$0.6650 10000:$0.6350
FJBE2150DTU DISTI # 512-FJBE2150DTU	ON Semiconductor	Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor RoHS: Compliant	0

FJBE2150D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes