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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
제조사:
ON Semiconductor / Fairchild
설명:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FJBE2150DTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
D2PAK-3
트랜지스터 극성:
NPN
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
800 V
컬렉터-베이스 전압 VCBO:
1.25 kV
이미터-베이스 전압 VEBO:
12 V
수집기-이미터 포화 전압:
0.25 V
최대 DC 수집기 전류:
2 A
이득 대역폭 곱 fT:
5 MHz
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 125 C
시리즈:
FJBE2150D
DC 전류 이득 hFE 최대:
35
포장:
튜브
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
0.5 A
DC 수집기/기본 이득 hfe 최소:
20
Pd - 전력 손실:
110 W
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
트랜지스터
단위 무게:
0.066315 oz
Tags
FJB
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
부분 # 제조 설명 재고 가격
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      영상 부분 # 설명
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      3500
      수량 입력:
      FJBE2150DTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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