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FJBE2150DTU

FJBE2150DTU
Mfr. #:
FJBE2150DTU
제조사:
ON Semiconductor / Fairchild
설명:
Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FJBE2150DTU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FJBE2150DTU Datasheet
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
양극성 트랜지스터 - BJT
RoHS:
Y
장착 스타일:
SMD/SMT
패키지/케이스:
D2PAK-3
트랜지스터 극성:
NPN
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
800 V
컬렉터-베이스 전압 VCBO:
1.25 kV
이미터-베이스 전압 VEBO:
12 V
수집기-이미터 포화 전압:
0.25 V
최대 DC 수집기 전류:
2 A
이득 대역폭 곱 fT:
5 MHz
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 125 C
시리즈:
FJBE2150D
DC 전류 이득 hFE 최대:
35
포장:
튜브
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
0.5 A
DC 수집기/기본 이득 hfe 최소:
20
Pd - 전력 손실:
110 W
상품 유형:
BJT - 양극성 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
트랜지스터
단위 무게:
0.066315 oz
Tags
FJB
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans GP BJT NPN 800V 2A 110000mW 3-Pin(2+Tab) D2PAK Rail
***r Electronics
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
***rchild Semiconductor
The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1500 volts and up to 3 amps, while providing exceptionally low on-resistance and very low switching losses.The ESBC™ switch is designed to be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC™ configuration further minimizes the required driving power because it does not have Miller capacitance.The FJBE2150D provides exceptional reliability and a large operating range due to its square Reverse-Bias-Safe-Operating-Area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures.The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in high-voltage HV-D2PAK rated at 2500 V creepage and clearance.
부분 # 제조 설명 재고 가격
FJBE2150DTU
DISTI # FJBE2150DTU-ND		ON SemiconductorTRANS NPN 800V 2A D2-PAK-2L
RoHS: Compliant
Container: Tube		Limited Supply - Call
    FJBE2150DTU
    DISTI # 96W6437    		ON SemiconductorNPN/1250V/3A / RAIL0
      영상 부분 # 설명
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU

      		 Bipolar Transistors - BJT ESBC Rated NPN Silicon Transistor
      FJBE2150DTU

      Mfr.#: FJBE2150DTU

      OMO.#: OMO-FJBE2150DTU-ON-SEMICONDUCTOR

      		 TRANS NPN 800V 2A D2-PAK-2L
      FJBE2150D

      Mfr.#: FJBE2150D

      OMO.#: OMO-FJBE2150D-1190

      		 신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      3500
      수량 입력:
      FJBE2150DTU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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