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IRF630NSPBF

IRF630NSPBF
Mfr. #:
IRF630NSPBF
제조사:
Infineon Technologies
설명:
Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF630NSPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF630NSPBF DatasheetIRF630NSPBF Datasheet (P4-P6)IRF630NSPBF Datasheet (P7-P9)IRF630NSPBF Datasheet (P10-P11)
ECAD Model:
제품 속성
속성 값
제조사
IR
제품 카테고리
FET - 단일
포장
튜브
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
82 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
15 ns
상승 시간
14 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
9.5 A
Vds-드레인-소스-고장-전압
200 V
Rds-On-Drain-Source-Resistance
300 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
27 ns
일반 켜기 지연 시간
7.9 ns
Qg-Gate-Charge
23.3 nC
채널 모드
상승
Tags
IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ow.cn
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
***trelec
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns
부분 # 제조 설명 재고 가격
IRF630NSPBF
DISTI # V36:1790_13890565		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube7
  • 100:$1.2055
  • 25:$1.3058
  • 10:$1.4732
  • 1:$1.6815
IRF630NSPBF
DISTI # IRF630NSPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A D2PAK
RoHS: Compliant
Min Qty: 850
Container: Tube		Limited Supply - Call
    IRF630NSPBF
    DISTI # C1S322000589278    		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
    RoHS: Compliant    		7
    • 10:$1.5584
    IRF630NSPBF
    DISTI # 38K2816    		Infineon Technologies AGMOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V , RoHS Compliant: Yes0
      IRF630NSPBF
      DISTI # 942-IRF630NSPBF      		Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      RoHS: Compliant      		0
        IRF630NSPBFInternational RectifierPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		2539
        • 1000:$0.6900
        • 500:$0.7300
        • 100:$0.7600
        • 25:$0.7900
        • 1:$0.8500
        IRF630NSPBFInternational Rectifier 29
          IRF630NSPBFInternational Rectifier 
          RoHS: Compliant          		Europe - 47
            IRF630NSTRLPBF
            DISTI # IRF630NSPBF-GURT            		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R DPak
            RoHS: Compliant            		360
            • 10:€0.6660
            • 50:€0.3960
            • 200:€0.3060
            • 500:€0.2950
            IRF630NSPBF
            DISTI # 8648352            		Infineon Technologies AGMOSFET, N, 200V, 9.5A, D2-PAK
            RoHS: Compliant            		2
            • 1:$2.6200
            • 10:$2.2400
            • 100:$1.7800
            • 500:$1.5700
            • 1000:$1.3000
            • 2500:$1.2800
            영상 부분 # 설명
            IRF630

            Mfr.#: IRF630

            OMO.#: OMO-IRF630

            		 MOSFET N-Ch 200 Volt 10 Amp
            IRF630STRL

            Mfr.#: IRF630STRL

            OMO.#: OMO-IRF630STRL-VISHAY

            		 MOSFET N-CH 200V 9A D2PAK
            IRF634BTSTU_FP001

            Mfr.#: IRF634BTSTU_FP001

            OMO.#: OMO-IRF634BTSTU-FP001-1190

            		 250V N-Channel BFET MOSFET
            IRF634NL

            Mfr.#: IRF634NL

            OMO.#: OMO-IRF634NL-1190

            		 신규 및 오리지널
            IRF630,IRF630NPBF,

            Mfr.#: IRF630,IRF630NPBF,

            OMO.#: OMO-IRF630-IRF630NPBF--1190

            		 신규 및 오리지널
            IRF6305TRL

            Mfr.#: IRF6305TRL

            OMO.#: OMO-IRF6305TRL-1190

            		 신규 및 오리지널
            IRF630BTSTU_FP001

            Mfr.#: IRF630BTSTU_FP001

            OMO.#: OMO-IRF630BTSTU-FP001-ON-SEMICONDUCTOR

            		 MOSFET N-CH 200V 9A TO-220
            IRF630ZFP/RDN100N20

            Mfr.#: IRF630ZFP/RDN100N20

            OMO.#: OMO-IRF630ZFP-RDN100N20-1190

            		 신규 및 오리지널
            IRF634A

            Mfr.#: IRF634A

            OMO.#: OMO-IRF634A-1190

            		 신규 및 오리지널
            IRF634PBF,IRF634

            Mfr.#: IRF634PBF,IRF634

            OMO.#: OMO-IRF634PBF-IRF634-1190

            		 신규 및 오리지널
            유효성
            재고:
            Available
            주문 시:
            4500
            수량 입력:
            IRF630NSPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            참고 가격(USD)
            수량
            단가
            내선 가격
            1
            US$1.04
            US$1.04
            10
            US$0.98
            US$9.83
            100
            US$0.93
            US$93.15
            500
            US$0.88
            US$439.90
            1000
            US$0.83
            US$828.00
            2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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