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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
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| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
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| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 3.4A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7810DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
|
| SI7810DN-T1-E3 DISTI # SI7810DN-T1-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R - Cut TR (SOS) (Alt: SI7810DN-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape | Americas - 945 |
|
| SI7810DN-T1-E3 DISTI # 06J8165 | Vishay Intertechnologies | N CHANNEL MOSFET, 100V, 3.4A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:100V,On Resistance Rds(on):84mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V , RoHS Compliant: Yes | 0 |
|
| SI7810DN-T1-E3. DISTI # 28AC2176 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: NO | 3000 |
|
| SI7810DN-T1-E3 DISTI # 70026075 | Vishay Siliconix | MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.052Ohm,ID 3.4A,PowerPAK 1212-8,PD 1.5W RoHS: Compliant | 0 |
|
| SI7810DN-T1-E3 DISTI # 781-SI7810DN-T1-E3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 1140 |
|
| SI7810DN-T1-E3 | Vishay Intertechnologies | POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), 100V, 0.062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2241 |
|
| SI7810DN-T1-E3 | Vishay Intertechnologies | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI7810DN-T1-GE3 OMO.#: OMO-SI7810DN-T1-GE3 |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
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Mfr.#: SI7810DN-T1-E3 OMO.#: OMO-SI7810DN-T1-E3 |
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
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Mfr.#: SI7810DN-T1-E3-CUT TAPE |
신규 및 오리지널 |
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Mfr.#: SI7810DN OMO.#: OMO-SI7810DN-1190 |
신규 및 오리지널 |
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Mfr.#: SI7810DN-T1 OMO.#: OMO-SI7810DN-T1-1190 |
POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), 100V, 0.062OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: SI7810DN-T1-E OMO.#: OMO-SI7810DN-T1-E-1190 |
신규 및 오리지널 |
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Mfr.#: SI7810DN-T1-GE3 OMO.#: OMO-SI7810DN-T1-GE3-VISHAY |
MOSFET N-CH 100V 3.4A 1212-8 |
|
|
Mfr.#: SI7810DN-T1E3 OMO.#: OMO-SI7810DN-T1E3-1190 |
신규 및 오리지널 |
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Mfr.#: SI7810DNT1GE3 OMO.#: OMO-SI7810DNT1GE3-1190 |
Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI7810DN-T1-E3 OMO.#: OMO-SI7810DN-T1-E3-VISHAY |
MOSFET N-CH 100V 3.4A 1212-8 |