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IPP60R180C7XKSA1

IPP60R180C7XKSA1
Mfr. #:
IPP60R180C7XKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 600V 13A TO220-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP60R180C7XKSA1 데이터 시트
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추가 정보:
IPP60R180C7XKSA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
튜브
부분 별칭
IPP60R180C7 SP001277624
패키지 케이스
TO-220-3
기술
시
Tags
IPP60R18, IPP60R1, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPP60R180C7 Series 600 V 13 A CoolMOS™ C7 Power Transistor - PG-TO-220-3-1
***et
CoolMOS C7 Power Transistor N-Channel 600V 45A 3-Pin TO-220
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
부분 # 제조 설명 재고 가격
IPP60R180C7XKSA1
DISTI # V99:2348_06377534		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		477
  • 1000:$1.3570
  • 500:$1.6490
  • 100:$1.8940
  • 10:$2.3980
  • 1:$3.1295
IPP60R180C7XKSA1
DISTI # V36:1790_06377534		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		28
  • 1000:$1.3570
  • 500:$1.6490
  • 100:$1.8940
  • 10:$2.3980
  • 1:$3.1295
IPP60R180C7XKSA1
DISTI # IPP60R180C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 13A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		479In Stock
  • 5000:$1.3284
  • 2500:$1.3795
  • 500:$1.7883
  • 100:$2.1766
  • 25:$2.5548
  • 10:$2.7080
  • 1:$3.0100
IPP60R180C7XKSA1
DISTI # 33120253		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		477
  • 5:$3.1295
IPP60R180C7XKSA1
DISTI # 33119108		Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		28
  • 6:$3.1295
IPP60R180C7XKSA1
DISTI # IPP60R180C7		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPP60R180C7)
RoHS: Compliant
Min Qty: 500		Asia - 500
    IPP60R180C7XKSA1
    DISTI # SP001277624    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001277624)
    RoHS: Compliant
    Min Qty: 1    		Europe - 1000
    • 1000:€1.0900
    • 50:€1.1900
    • 100:€1.1900
    • 500:€1.1900
    • 25:€1.2900
    • 10:€1.3900
    • 1:€1.5900
    IPP60R180C7XKSA1
    DISTI # IPP60R180C7XKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R180C7XKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 3000:$1.1900
    • 5000:$1.1900
    • 1000:$1.2900
    • 2000:$1.2900
    • 500:$1.3900
    IPP60R180C7XKSA1
    DISTI # 13AC9083    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes829
    • 1000:$1.4200
    • 500:$1.7200
    • 100:$1.9600
    • 10:$2.4500
    • 1:$2.8900
    IPP60R180C7XKSA1
    DISTI # 726-IPP60R180C7XKSA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$2.8600
    • 10:$2.4300
    • 100:$1.9400
    • 500:$1.7000
    • 1000:$1.4100
    IPP60R180C7XKSA1
    DISTI # 2726069    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-220-3
    RoHS: Compliant    		809
    • 5000:$2.0400
    • 2500:$2.0700
    • 500:$2.6800
    • 100:$3.2600
    • 25:$3.8300
    • 10:$4.0600
    • 1:$4.5000
    IPP60R180C7XKSA1
    DISTI # 2726069    		Infineon Technologies AGMOSFET, N-CH, 600V, 13A, TO-220-3799
    • 500:£1.2800
    • 250:£1.3700
    • 100:£1.4600
    • 10:£1.8400
    • 1:£2.4400
    IPP60R180C7XKSA1
    DISTI # IPP60R180C7    		Infineon Technologies AGN-Ch 600V 13A 68W 0,18R TO220
    RoHS: Compliant    		436
    • 1:€5.3200
    • 10:€2.3200
    • 50:€1.3200
    • 100:€1.2100
    영상 부분 # 설명
    IPP60R180P7XKSA1

    Mfr.#: IPP60R180P7XKSA1

    OMO.#: OMO-IPP60R180P7XKSA1

    		 MOSFET
    IPP60R180C7XKSA1

    Mfr.#: IPP60R180C7XKSA1

    OMO.#: OMO-IPP60R180C7XKSA1

    		 MOSFET HIGH POWER_NEW
    IPP60R180C7XKSA1

    Mfr.#: IPP60R180C7XKSA1

    OMO.#: OMO-IPP60R180C7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 600V 13A TO220-3
    IPP60R180P7XKSA1

    Mfr.#: IPP60R180P7XKSA1

    OMO.#: OMO-IPP60R180P7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 18A TO220-3
    IPP60R180C7

    Mfr.#: IPP60R180C7

    OMO.#: OMO-IPP60R180C7-1190

    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    4500
    수량 입력:
    IPP60R180C7XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.00
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    100
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    시작
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