TGF2023-2-01

Mfr. #:: TGF2023-2-01
제조사:: Qorvo
설명:: RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2023-2-01 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TGF2023-2-01 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

트랜지스터 극성:: N-채널

패키지/케이스:: 주사위

포장:: 젤팩

제품:: RF JFET

시리즈:: TGF

유형:: GaN SiC HEMT

상표:: 코르보

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1099624

Tags: TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2023-2-01 설명

***hardson RFPD: RF POWER TRANSISTOR

TGF2023-2-01 추가 정보

GaN Solutions: Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

TGF2023 GaN HEMT Transistors: Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2023-2-01 DISTI # 772-TGF2023-2-01	Qorvo	RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB RoHS: Compliant	0	50:$30.2800 100:$26.1900 250:$24.6200

관련 상품

영상	부분 #	설명
	Mfr.#: TGF2023-2-02 OMO.#: OMO-TGF2023-2-02	RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
	Mfr.#: TGF2023-2-01 OMO.#: OMO-TGF2023-2-01	RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
	Mfr.#: TGF2025 OMO.#: OMO-TGF2025	RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
	Mfr.#: TGF2023-2-05 OMO.#: OMO-TGF2023-2-05	RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
	Mfr.#: TGF2025 OMO.#: OMO-TGF2025-318	RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
	Mfr.#: TGF2021-02 OMO.#: OMO-TGF2021-02-318	RF JFET Transistors DC-12GHz 2mm Pwr pHEMT (0.35um)
	Mfr.#: TGF2023-2-05 OMO.#: OMO-TGF2023-2-05-318	RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
	Mfr.#: TGF2021-04-SD-T/R OMO.#: OMO-TGF2021-04-SD-T-R-1190	신규 및 오리지널
	Mfr.#: TGF2021-08-SG OMO.#: OMO-TGF2021-08-SG-1152	RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
	Mfr.#: TGF2023-20 OMO.#: OMO-TGF2023-20-1152	RF JFET Transistors 20mm GaN Discrete