TGF2023-2-05

TGF2023-2-05
Mfr. #:
TGF2023-2-05
제조사:
Qorvo
설명:
RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2023-2-05 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2023-2-05 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
기술:
GaN
얻다:
16.2 dB
Vds - 드레인 소스 항복 전압:
-
Vgs - 게이트 소스 항복 전압:
-
Id - 연속 드레인 전류:
-
출력 파워:
90 W
최대 드레인 게이트 전압:
-
최소 작동 온도:
- 40 C
최대 작동 온도:
-
Pd - 전력 손실:
-
장착 스타일:
SMD/SMT
패키지/케이스:
DFN-6
포장:
애플리케이션:
마이크로셀 기지국, W-CDMA / LTE
구성:
하나의
동작 주파수:
1.8 GHz to 3.8 GHz
시리즈:
QPD
상표:
코르보
순방향 트랜스컨덕턴스 - 최소:
-
개발 키트:
QPD0060PCB4B01
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
250
하위 카테고리:
트랜지스터
부품 번호 별칭:
1131037
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0 to 18 GHz, 25 W, 11.9 dB, 28 V, GaN, 0.82 X 1.44 X 0.10 mm
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
부분 # 제조 설명 재고 가격
TGF2023-2-05
DISTI # 772-TGF2023-2-05
QorvoRF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
RoHS: Compliant
0
  • 50:$59.9400
  • 100:$51.8400
1099947
DISTI # TGF2023-2-05
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$39.4700
영상 부분 # 설명
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2023-2-20

Mfr.#: TGF2023-2-20

OMO.#: OMO-TGF2023-2-20

RF JFET Transistors DC-18GHZ 90W TQGaN25 PAE 70.5% Gain 19dB
TGF2022-12

Mfr.#: TGF2022-12

OMO.#: OMO-TGF2022-12-318

RF JFET Transistors DC-20GHz 1.2mm Pwr pHEMT (0.35um)
TGF2022-24

Mfr.#: TGF2022-24

OMO.#: OMO-TGF2022-24-318

RF JFET Transistors DC-20GHz 2.4mm Pwr pHEMT (0.35um)
TGF2023-2-10

Mfr.#: TGF2023-2-10

OMO.#: OMO-TGF2023-2-10-318

RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
TGF2023-2-05

Mfr.#: TGF2023-2-05

OMO.#: OMO-TGF2023-2-05-318

RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB
TGF2022-60

Mfr.#: TGF2022-60

OMO.#: OMO-TGF2022-60-318

RF JFET Transistors DC-20GHz 6.0mm Pwr pHEMT (0.35um)
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2023-01

Mfr.#: TGF2023-01

OMO.#: OMO-TGF2023-01-1152

RF JFET Transistors 1.25mm GaN Discrete
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
유효성
재고:
Available
주문 시:
1500
수량 입력:
TGF2023-2-05의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
50
US$59.94
US$2 997.00
100
US$51.84
US$5 184.00
시작
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