CSD25303W1015

Mfr. #:: CSD25303W1015
설명:: MOSFET PCh NexFET Pwr MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD25303W1015 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: CSD25303W1015 추가 정보 CSD25303W1015 Product Details

제품 속성
속성 값

제조사:: 텍사스 인스트루먼트

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DSBGA-6

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 3 A

Rds On - 드레인 소스 저항:: 56 mOhms

Vgs - 게이트 소스 전압:: 8 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.5 W

구성:: 하나의

상표명:: 넥스펫

포장:: 릴

키:: 0.625 mm

길이:: 1.5 mm

시리즈:: CSD25303W1015

트랜지스터 유형:: 1 P-Channel

너비:: 1 mm

상표:: 텍사스 인스트루먼트

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

단위 무게:: 0.000060 oz

Tags: CSD2530, CSD253, CSD25, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25303W1015 설명

***as Instruments: P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150

***ical: Trans MOSFET P-CH 20V 3A 6-Pin DSBGA T/R

***et: Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Obsolete, LTB expires Nov-01-2014

***ure Electronics: Single N-Channel 20 V 1.5 W 8.8 nC Silicon Surface Mount Mosfet - SOT-23-6

***ical: Trans MOSFET N-CH 20V 4A Automotive 6-Pin SOT-26 T/R

***ark: Mosfet, N-Ch, 20V, 4A, Sot-26 Rohs Compliant: Yes

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***emi: PowerTrench® MOSFET, Dual P-Channel, -20V , -3.7A, 72mΩ

***et Europe: Transistor MOSFET Array Dual P-CH 20V 3.7A 6-Pin MicroFET T/R

***ure Electronics: FDMA1023PZ Series -20 V -3.7 A 72 mOhm Dual P-Ch. PowerTrench® MOSFET-MicroFET-6

***r Electronics: Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC

***nell: MOSFET, DUAL P CH, -20V, -3.7A, MICROFET; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

***emi: Power MOSFET 20V 3.2A 100 mOhm Dual Complementary WDFN6 with ESD

***r Electronics: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:6-WDFN; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

*** Source Electronics: Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3

***enic: 20V 3.1A 1.6W 112m´Î@4.5V2.8A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P CH, -20V, -3.1A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-2.5V; Power Dissipation Pd:1.6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-

***peria: PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET

***et: Trans MOSFET Array Dual P-CH 20V 3.5A 6-Pin HUSON EP T/R

*** Americas: =""=""=""SOT1118/ STANDARD MARKING * REEL PACK, SMD, 7""""""""

***S: French Electronic Distributor since 1988

***ark: DUAL P CH MOSFET, TRENCH, 320V, -3.5A, SOT-1118; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:-4.5V ;RoHS Compliant: Yes

Market price

부분 #	설명	재고	가격
CSD25303W1015 DISTI # 296-28317-2-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-1-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
CSD25303W1015 DISTI # 296-28317-6-ND	MOSFET P-CH 20V 3A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CSD25303W1015 DISTI # CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD25303W1015) RoHS: Not Compliant Min Qty: 1000	Americas - 0	1000:$0.3619 1002:$0.3449 2002:$0.3329 5000:$0.3219 10000:$0.3129
CSD25303W1015	Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4390	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
CSD25303W1015 DISTI # 595-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET RoHS: Compliant	0

관련 상품

영상	부분 #	설명
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T	MOSFET -20V, P ch NexFET MOSFETG , single SON 2x2, 23.9mOhm 6-WSON -55 to 150
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2	MOSFET 20-V P-CH NexFET Pwr MOSFET
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T	MOSFET 20V P-Ch NexFET
	Mfr.#: CSD25301W1015 OMO.#: OMO-CSD25301W1015	MOSFET P-Ch NexFET Power MOSFETs
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25303W1015 OMO.#: OMO-CSD25303W1015	MOSFET PCh NexFET Pwr MOSFET
	Mfr.#: CSD25302Q2 OMO.#: OMO-CSD25302Q2-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 5A 6SON
	Mfr.#: CSD25304W1015T OMO.#: OMO-CSD25304W1015T-TEXAS-INSTRUMENTS	MOSFET P-CH 20V 3A 6DSBGA
	Mfr.#: CSD25310Q2T OMO.#: OMO-CSD25310Q2T-TEXAS-INSTRUMENTS	20-V P-CHANNEL NEXFET POWER MOSF
	Mfr.#: CSD25310Q2 OMO.#: OMO-CSD25310Q2-TEXAS-INSTRUMENTS	Trans MOSFET P-CH 20V 20A 6-Pin WSON EP T/R

유효성

재고:: Available
주문 시:: 4500
수량 입력:

CSD25303W1015의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

CSD2530 5
CSD253 7
CSD25 33
CSD2 105
CSD 800

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CSD25303W1015

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes