PartNumber | CSD25301W1015 | CSD25302Q2 | CSD25303W1015 |
Description | MOSFET P-Ch NexFET Power MOSFETs | MOSFET PCh NexFET Pwr MOSFET | MOSFET PCh NexFET Pwr MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DSBGA-6 | WSON-FET-6 | DSBGA-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 2.2 A | 5 A | 3 A |
Rds On Drain Source Resistance | 75 mOhms | 49 mOhms | 56 mOhms |
Vgs Gate Source Voltage | 8 V | 8 V | 8 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1500 mW | 2.4 W | 1.5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Reel |
Height | 0.625 mm | 0.75 mm | 0.625 mm |
Length | 1.5 mm | 2 mm | 1.5 mm |
Series | CSD25301W1015 | CSD25302Q2 | CSD25303W1015 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 1 mm | 2 mm | 1 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Fall Time | 12 ns | 1.3 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2 ns | 13.2 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 29 ns | 8.6 ns | - |
Typical Turn On Delay Time | 4 ns | 3.2 ns | - |
Unit Weight | 0.000060 oz | - | 0.000060 oz |
Qg Gate Charge | - | 2.6 nC | - |
Forward Transconductance Min | - | 12.3 S | - |