AS6C8008-55BIN

Mfr. #:: AS6C8008-55BIN
제조사:: Alliance Memory
설명:: SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: AS6C8008-55BIN 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: AS6C8008-55BIN 추가 정보

제품 속성
속성 값

제조사:: 얼라이언스 메모리

제품 카테고리:: 스램

RoHS:: Y

메모리 크기:: 8 Mbit

조직:: 1 M x 8

액세스 시간:: 55 ns

인터페이스 유형:: 평행 한

공급 전압 - 최대:: 5.5 V

공급 전압 - 최소:: 2.7 V

공급 전류 - 최대:: 60 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

장착 스타일:: SMD/SMT

패키지/케이스:: TFBGA-44

포장:: 쟁반

메모리 유형:: SDR

시리즈:: AS6C8008

유형:: 비동기

상표:: 얼라이언스 메모리

습기에 민감한:: 네

상품 유형:: 스램

공장 팩 수량:: 480

하위 카테고리:: 메모리 및 데이터 저장

Tags: AS6C8008-5, AS6C800, AS6C8, AS6C, AS6

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS6C8008-55BIN 설명

***ure Electronics: AS6C8008 Series 8-Mbit (1024 K x 8) 3 V 55 ns CMOS Static RAM - TFBGA-48

***ark: SRAM, 8MB, 2.7-5.5V, 1024KX8,TFBGA48; Memory Type:SRAM; Interface Type:Asynchronous; Memory Size:8Mbit; Memory Configuration:1M x 8bit; Access Time:55ns; Memory Voltage Vcc:3.3V; Min Supply Voltage:2.7V; Max Supply Voltage:5.5V; ;RoHS Compliant: Yes

***nell: SRAM, 8MB, 2.7-5.5V, 1024KX8, TFBGA48; Memory Size:8Mbit; Supply Voltage Range:2.7V to 5.5V; Memory Case Style:TFBGA; No. of Pins:48Pins; Access Time:55ns; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Memory Type:SRAM; Memory Voltage Vcc:3.3V; Operating Temperature Range:-40°C to +85°C; Supply Voltage Max:5.5V; Supply Voltage Min:2.7V; Termination Type:Surface Mount Device

AS6C8008-55BIN 추가 정보

Low Power CMOS SRAM: Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

Market price

부분 #	제조	설명	재고	가격
AS6C8008-55BIN DISTI # 1450-1187-ND	Alliance Memory Inc	IC SRAM 8M PARALLEL 48TFBGA RoHS: Compliant Min Qty: 1 Container: Tray	2271In Stock	1440:$4.9612 960:$5.0458 480:$5.4059 100:$5.5750 50:$6.2144 25:$6.2364 10:$6.3690 1:$6.9200
AS6C8008-55BINTR DISTI # AS6C8008-55BINTR-ND	Alliance Memory Inc	IC SRAM 8M PARALLEL 48TFBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$4.8644
AS6C8008-55BIN DISTI # AS6C8008-55BIN	Alliance Memory Inc	SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 48-Pin TFBGA - Trays (Alt: AS6C8008-55BIN) RoHS: Compliant Min Qty: 480 Container: Tray	Americas - 0	480:$5.3900 960:$5.2900 1920:$5.2900 2880:$5.1900 4800:$4.9900
AS6C8008-55BIN DISTI # AS6C8008-55BIN	Alliance Memory Inc	SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 48-Pin TFBGA (Alt: AS6C8008-55BIN) RoHS: Compliant Min Qty: 1	Europe - 0	1:€5.6900 10:€5.1900 25:€4.9900 50:€4.7900 100:€4.5900 500:€4.4900 1000:€4.1900
AS6C8008-55BINTR DISTI # AS6C8008-55BINTR	Alliance Memory Inc	SRAM Chip Async Single 3V 8M-Bit 1M x 8 55ns 48-Pin TFBGA - Tape and Reel (Alt: AS6C8008-55BINTR) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$4.5900 4000:$4.5900 8000:$4.0900 12000:$3.9900 20000:$3.8900
AS6C8008-55BIN DISTI # 913-AS6C8008-55BIN	Alliance Memory Inc	SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM RoHS: Compliant	365	1:$7.2500 10:$6.6800 25:$6.5400 50:$6.5200 100:$5.8500 250:$5.6700 500:$5.2900 1000:$5.2000
AS6C8008-55BINTR DISTI # 913-AS6C8008-55BINTR	Alliance Memory Inc	SRAM 8M, 2.7-5.5V, 55ns 1024K x 8 Asyn SRAM RoHS: Compliant	0	2000:$5.1000
AS6C8008-55BIN	Alliance Memory Inc	8MbLP SRAM1M x 82.7 ~ 5.5V48ball TFBGA (6 x 8mm)55nsIndustrial Temp	2247
AS6C8008-55BINTR	Alliance Memory Inc	SRAM 8M2.7-5.5V55ns 1024K x 8 Asyn SRAM	2000
AS6C8008-55BIN DISTI # XSFP00000104341	Alliance Memory Inc	RoHS: Compliant	516	480:$6.6700 516:$6.2500

관련 상품

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	Mfr.#: S25FL512SAGMFI011 OMO.#: OMO-S25FL512SAGMFI011	NOR Flash 512Mb 3V 133MHz Serial NOR Flash
	Mfr.#: TJA1051T,118 OMO.#: OMO-TJA1051T-118	CAN Interface IC CAN 1Mbps Silent 4.5V/5.5V 8-Pin
	Mfr.#: LT3062EDCB-5#TRMPBF OMO.#: OMO-LT3062EDCB-5-TRMPBF	LDO Voltage Regulators 45V Vin, Micropower, Low Noise, 200mA LDO with Output Discharge
	Mfr.#: LT3060EDC-5#TRMPBF OMO.#: OMO-LT3060EDC-5-TRMPBF	LDO Voltage Regulators 45V Vin, 100mA, Low Noise, Low Dropout, Micropower Linear Regulator
	Mfr.#: MCP6044-I/ST OMO.#: OMO-MCP6044-I-ST-MICROCHIP-TECHNOLOGY	Operational Amplifiers - Op Amps Quad 1.6V 10kHz
	Mfr.#: OP296HRUZ-REEL OMO.#: OMO-OP296HRUZ-REEL-ANALOG-DEVICES	Operational Amplifiers - Op Amps Micropower RRIO Dual 300uV Max 450kHZ
	Mfr.#: TJA1051T,118 OMO.#: OMO-TJA1051T-118-NXP-SEMICONDUCTORS	CAN Interface IC CAN 1Mbps Silent 3.3V/5V 8-Pin
	Mfr.#: S25FL512SAGMFI011 OMO.#: OMO-S25FL512SAGMFI011-CYPRESS-SEMICONDUCTOR	IC FLASH 512M SPI 133MHZ 16SOIC

유효성

재고:: 115
주문 시:: 2098
수량 입력:

AS6C8008-55BIN의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$7.25~~; ~~US$7.25~~

10: ~~US$6.68~~; ~~US$66.80~~

25: ~~US$6.54~~; ~~US$163.50~~

50: ~~US$6.52~~; ~~US$326.00~~

100: ~~US$5.85~~; ~~US$585.00~~

250: ~~US$5.67~~; ~~US$1 417.50~~

500: ~~US$5.29~~; ~~US$2 645.00~~

1000: ~~US$5.20~~; ~~US$5 200.00~~

2000: ~~US$5.03~~; ~~US$10 060.00~~

시작

AS6C8008-5 4
AS6C800 12
AS6C8 27
AS6C 182
AS6 452

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AS6C8008-55BIN

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes