T1G2028536-FL

T1G2028536-FL
Mfr. #:
T1G2028536-FL
제조사:
Qorvo
설명:
RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
T1G2028536-FL 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
T1G2028536-FL 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
평가 및 데모 보드 및 키트
제품
평가 보드
유형
RF 트랜지스터
포장
대부분
부분 별칭
1111296
함께 사용
T1G2028536-FL
빈도
1.4 GHz
설명-기능
1.2 1.4 GHz evaluation board
도구는 평가 대상
T1G2028536-FL
Tags
T1G2028536, T1G2, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
부분 # 제조 설명 재고 가격
T1G2028536-FL
DISTI # 772-T1G2028536-FL
QorvoRF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
RoHS: Compliant
12
  • 1:$508.0000
T1G2028536-FL/FS 1.2-1.4GHz EVB5
DISTI # 772-T1G2028536-EVAL
QorvoRF Development Tools DC-2GHz P3dB 260W Eval Board
RoHS: Compliant
0
  • 1:$875.0000
1111394
DISTI # T1G2028536-FL
QorvoRF POWER TRANSISTOR
RoHS: Compliant
31
  • 1:$378.7500
영상 부분 # 설명
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL/FS 1.2-1.4GHz EVB5

Mfr.#: T1G2028536-FL/FS 1.2-1.4GHz EVB5

OMO.#: OMO-T1G2028536-FL-FS-1-2-1-4GHZ-EVB5-1152

RF Development Tools DC-2GHz P3dB 260W Eval Board
T1G2028535-FL

Mfr.#: T1G2028535-FL

OMO.#: OMO-T1G2028535-FL-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
3000
수량 입력:
T1G2028536-FL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$762.00
US$762.00
10
US$723.90
US$7 239.00
100
US$685.80
US$68 580.00
500
US$647.70
US$323 850.00
1000
US$609.60
US$609 600.00
시작
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