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HGTG18N120BND

HGTG18N120BND
Mfr. #:
HGTG18N120BND
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGTG18N120BND 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.45 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
54 A
Pd - 전력 손실:
390 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
HGTG18N120BND
포장:
튜브
연속 수집가 현재 IC 최대:
54 A
키:
20.82 mm
길이:
15.87 mm
너비:
4.82 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
54 A
게이트-이미터 누설 전류:
+/- 250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
부품 번호 별칭:
HGTG18N120BND_NL
단위 무게:
0.225401 oz
Tags
HGTG18N120BND, HGTG18N120B, HGTG18, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    FR

    recu rapide

    2019-06-30
    R***e
    R***e
    LT

    Thanks!

    2019-05-28
    D***v
    D***v
    RU

    Very long shipping and seller did not extend the protection period.

    2019-04-16
***Components
In a Tube of 30, ON Semiconductor HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
***inecomponents.com
54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode
***i-Key
IGBT NPT N-CHAN 1200V 54A TO-247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***ser
IGBTs 36A, 1200V, N-Ch
***Semiconductor
IGBT, 1200V, NPT
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.45V; Power Dissipation, Pd:390W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:390W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic @ Vce Sat:18A; Current, Icm Pulsed:160A; Device Marking:HGTG18N120BND; Power, Pd:390W; Time, Rise:22ns
***ment14 APAC
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
부분 # 제조 설명 재고 가격
HGTG18N120BND
DISTI # HGTG18N120BND-ND		ON SemiconductorIGBT 1200V 54A 390W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 1350:$3.6624
  • 900:$4.2050
  • 450:$4.6119
  • 10:$5.8330
  • 1:$6.4600
HGTG18N120BND
DISTI # HGTG18N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG18N120BND)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 450
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 54A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8901)
    RoHS: Compliant
    Min Qty: 1
    Container: Bulk    		Americas - 0
    • 1:$5.6400
    • 900:$5.1600
    HGTG18N120BND
    DISTI # 58K8901    		ON SemiconductorSINGLE IGBT, 1.2KV, 54A, TO-247,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:390W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes0
    • 1:$7.7100
    • 10:$7.0000
    • 25:$6.6800
    • 50:$6.2500
    • 100:$5.8200
    • 250:$5.5800
    • 500:$5.1000
    HGTG18N120BND
    DISTI # 97K1398    		ON SemiconductorIGBT Single Transistor, General Purpose, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0
    • 1:$6.5500
    • 10:$5.9500
    • 25:$5.6800
    • 50:$5.3300
    • 100:$4.9700
    • 250:$4.7600
    • 500:$4.3600
    HGTG18N120BND
    DISTI # 512-HGTG18N120BND    		ON SemiconductorIGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
    RoHS: Compliant    		436
    • 1:$6.1500
    • 10:$5.5600
    • 25:$5.3000
    • 100:$4.6000
    • 250:$4.4000
    HGTG18N120BND
    DISTI # 9034285P    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, TU14
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BND
    DISTI # 9034285    		ON SemiconductorIGBT N-CH 1200V 54A NPT TO-247, EA58
    • 1:£5.1400
    • 15:£4.6500
    • 30:£4.4300
    • 100:£3.8400
    • 300:£3.6800
    HGTG18N120BNDFairchild Semiconductor CorporationINSTOCK62
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		9
      • 1:$9.7400
      • 10:$8.8000
      • 25:$8.3900
      • 100:$7.2800
      • 250:$6.9700
      HGTG18N120BND
      DISTI # 1095111      		ON SemiconductorIGBT, N, TO-247
      RoHS: Compliant      		757
      • 1:£5.2700
      • 5:£4.7800
      • 10:£4.1300
      • 50:£3.8600
      • 100:£3.5800
      영상 부분 # 설명
      AT24CM02-SSHD-B

      Mfr.#: AT24CM02-SSHD-B

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      HGTG10N120BND

      Mfr.#: HGTG10N120BND

      OMO.#: OMO-HGTG10N120BND

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      Mfr.#: RS1M

      OMO.#: OMO-RS1M

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      HGTG10N120BND

      Mfr.#: HGTG10N120BND

      OMO.#: OMO-HGTG10N120BND-ON-SEMICONDUCTOR

      		 IGBT 1200V 35A 298W TO247
      RS1M

      Mfr.#: RS1M

      OMO.#: OMO-RS1M-ON-SEMICONDUCTOR

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      Mfr.#: 06035C224KAT2A

      OMO.#: OMO-06035C224KAT2A-AVX

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      Mfr.#: AT24CM02-SSHD-B

      OMO.#: OMO-AT24CM02-SSHD-B-MICROCHIP-TECHNOLOGY

      		 IC EEPROM 2M I2C 1MHZ 8SOIC
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      Mfr.#: INA1650IPWR

      OMO.#: OMO-INA1650IPWR-TEXAS-INSTRUMENTS

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      Mfr.#: TAP475M035GSB

      OMO.#: OMO-TAP475M035GSB-AVX

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      유효성
      재고:
      663
      주문 시:
      2646
      수량 입력:
      HGTG18N120BND의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$6.21
      US$6.21
      10
      US$5.28
      US$52.80
      100
      US$4.57
      US$457.00
      250
      US$4.34
      US$1 085.00
      500
      US$3.89
      US$1 945.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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