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HGTG10N120BND

HGTG10N120BND
Mfr. #:
HGTG10N120BND
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 35A 1200V N-Ch
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGTG10N120BND 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
E
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.45 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
17 A
Pd - 전력 손실:
298 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
HGTG10N120BND
포장:
튜브
연속 수집가 현재 IC 최대:
35 A
키:
20.82 mm
길이:
15.87 mm
너비:
4.82 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
35 A
게이트-이미터 누설 전류:
+/- 250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
부품 번호 별칭:
HGTG10N120BND_NL
단위 무게:
0.225401 oz
Tags
HGTG10N120BND, HGTG10N120B, HGTG10, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT,N CH,NPT,1200V,35A,TO-247; Transistor Type:IGBT; DC Collector Current:35A; Collector Emitter Voltage Vces:2.7V; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Max:298W
***rchild Semiconductor
HGTG10N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
부분 # 제조 설명 재고 가격
HGTG10N120BND
DISTI # C1S541901484134		ON SemiconductorTrans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		140
  • 100:$2.5900
  • 50:$2.8200
  • 10:$3.4400
  • 1:$5.3000
HGTG10N120BND
DISTI # HGTG10N120BND-ND		ON SemiconductorIGBT 1200V 35A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		855In Stock
  • 1350:$2.1481
  • 900:$2.5216
  • 450:$2.7946
  • 10:$3.5560
  • 1:$3.9500
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.6900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.3900
  • 1000:€1.3900
HGTG10N120BND
DISTI # HGTG10N120BND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG10N120BND)
RoHS: Compliant
Min Qty: 450		Asia - 0
    HGTG10N120BND
    DISTI # HGTG10N120BND    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG10N120BND)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.5900
    • 900:$1.5900
    • 1800:$1.5900
    • 2700:$1.4900
    • 4500:$1.4900
    HGTG10N120BND
    DISTI # 98B1928    		ON SemiconductorSINGLE IGBT, 1.2KV, 35A,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
    • 1:$3.7700
    • 10:$3.2200
    • 25:$3.0800
    • 50:$2.9500
    • 100:$2.8100
    • 250:$2.6800
    • 500:$2.4200
    HGTG10N120BND.
    DISTI # 16AC0004    		Fairchild Semiconductor CorporationDC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
      HGTG10N120BNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247
      RoHS: Compliant      		485
      • 1000:$1.8000
      • 500:$1.9000
      • 100:$1.9800
      • 25:$2.0600
      • 1:$2.2200
      HGTG10N120BNDON SemiconductorHGTG10N120BND Series 1200 V 35 A Flange Mount NPT N-Channel IGBT-TO-247
      RoHS: Compliant      		75Tube
      • 5:$2.9400
      • 25:$1.9900
      • 50:$1.8300
      • 250:$1.5100
      HGTG10N120BND
      DISTI # 512-HGTG10N120BND      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Compliant      		29
      • 1:$3.6300
      • 10:$3.0800
      • 100:$2.6700
      • 250:$2.5400
      • 500:$2.2800
      HGTG10N120BND_Q
      DISTI # 512-HGTG10N120BND_Q      		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
      RoHS: Not compliant      		0
        HGTG10N120BNDHarris Semiconductor 20
          HGTG10N120BND
          DISTI # HGTG10N120BND          		ON SemiconductorTransistor: IGBT,1.2kV,17A,298W,TO247429
          • 1:$3.6000
          • 3:$3.1900
          • 10:$2.7200
          • 30:$2.3500
          • 150:$2.1300
          HGTG10N120BNDFairchild Semiconductor Corporation 
          RoHS: Compliant          		Europe - 1130
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            유효성
            재고:
            641
            주문 시:
            2624
            수량 입력:
            HGTG10N120BND의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
            참고 가격(USD)
            수량
            단가
            내선 가격
            1
            US$3.62
            US$3.62
            10
            US$3.07
            US$30.70
            100
            US$2.66
            US$266.00
            250
            US$2.53
            US$632.50
            500
            US$2.27
            US$1 135.00
            1000
            US$1.91
            US$1 910.00
            2500
            US$1.82
            US$4 550.00
            5000
            US$1.75
            US$8 750.00
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