SPD04N80C3ATMA1

SPD04N80C3ATMA1
Mfr. #:
SPD04N80C3ATMA1
제조사:
Infineon Technologies
설명:
MOSFET LOW POWER_LEGACY
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SPD04N80C3ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SPD04N80C3ATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
800 V
Id - 연속 드레인 전류:
4 A
Rds On - 드레인 소스 저항:
1.1 Ohms
Vgs th - 게이트 소스 임계 전압:
2.1 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
31 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
63 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
키:
2.3 mm
길이:
6.5 mm
시리즈:
CoolMOS C3
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
인피니언 테크놀로지스
가을 시간:
12 ns
상품 유형:
MOSFET
상승 시간:
15 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
72 ns
일반적인 켜기 지연 시간:
25 ns
부품 번호 별칭:
SP001117768 SPD04N80C3
단위 무게:
0.139332 oz
Tags
SPD04N8, SPD04N, SPD04, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.3 Ohm 31 nC CoolMOS™ Power Mosfet - TO-252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; Package / Case:TO-252; Power Dissipation Pd:63W; Pulse Current Idm:12A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
SPD04N80C3ATMA1
DISTI # 30617182
Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2200
  • 200:$1.1666
  • 100:$1.1781
  • 50:$1.2202
  • 12:$1.4917
SPD04N80C3ATMA1
DISTI # 26970908
Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2179
  • 11:$0.5865
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.7295
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.8051
  • 500:$1.0197
  • 100:$1.3149
  • 10:$1.6640
  • 1:$1.8800
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 4A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.8051
  • 500:$1.0197
  • 100:$1.3149
  • 10:$1.6640
  • 1:$1.8800
SPD04N80C3ATMA1
DISTI # V72:2272_06383641
Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2179
  • 1:$0.6489
SPD04N80C3ATMA1
DISTI # SPD04N80C3ATMA1
Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD04N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.6819
  • 5000:$0.6569
  • 10000:$0.6339
  • 15000:$0.6119
  • 25000:$0.6009
SPD04N80C3ATMA1
DISTI # SP001117768
Infineon Technologies AGTrans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R (Alt: SP001117768)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.9329
  • 5000:€0.7629
  • 10000:€0.6999
  • 15000:€0.6459
  • 25000:€0.5999
SPD04N80C3ATMA1
DISTI # 33P8206
Infineon Technologies AGMOSFET, N CHANNEL, 800V, 4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes0
  • 1000:$0.6350
  • 500:$0.8040
  • 250:$0.8570
  • 100:$0.9100
  • 50:$1.0000
  • 25:$1.1000
  • 10:$1.1900
  • 1:$1.3900
SPD04N80C3ATMA1
DISTI # 726-SPD04N80C3ATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
2475
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0100
  • 500:$0.9010
  • 1000:$0.7110
SPD04N80C3ATMA1
DISTI # 1664108
Infineon Technologies AGMOSFET, N, TO-252
RoHS: Compliant
386
  • 500:£0.6950
  • 250:£0.7370
  • 100:£0.7790
  • 25:£1.0100
  • 5:£1.1100
영상 부분 # 설명
SI4460-B1B-FMR

Mfr.#: SI4460-B1B-FMR

OMO.#: OMO-SI4460-B1B-FMR

RF Transceiver +13/-126 dBm sub-GHz transmitter
SIR616DP-T1-GE3

Mfr.#: SIR616DP-T1-GE3

OMO.#: OMO-SIR616DP-T1-GE3

MOSFET 200V Vds 20V Vgs PowerPAK SO-8
VOM617A-8X001T

Mfr.#: VOM617A-8X001T

OMO.#: OMO-VOM617A-8X001T

Transistor Output Optocouplers Phototransistor Out CTR 130-260% 5mA VDE
PIC12F683T-E/SN

Mfr.#: PIC12F683T-E/SN

OMO.#: OMO-PIC12F683T-E-SN

8-bit Microcontrollers - MCU 3.5KB 128 RAM 6 I/O
LPC812M101JDH16J

Mfr.#: LPC812M101JDH16J

OMO.#: OMO-LPC812M101JDH16J

ARM Microcontrollers - MCU 32bit ARM Cortex-M0+ microcontroller
ERJ-6GEYJ102V

Mfr.#: ERJ-6GEYJ102V

OMO.#: OMO-ERJ-6GEYJ102V

Thick Film Resistors - SMD 0805 1Kohms 5% AEC-Q200
709296001003006

Mfr.#: 709296001003006

OMO.#: OMO-709296001003006

Terminals SINGLE POKE HOME 1P 3mm CONTACT
MK16-C-2

Mfr.#: MK16-C-2

OMO.#: OMO-MK16-C-2

Proximity Sensors 1 Form A Surface Mount
G001R4000FE1280

Mfr.#: G001R4000FE1280

OMO.#: OMO-G001R4000FE1280-1098

Wirewound Resistors - Through Hole 1watt .4ohms 1% Axial
LPC812M101JDH16J

Mfr.#: LPC812M101JDH16J

OMO.#: OMO-LPC812M101JDH16J-NXP-SEMICONDUCTORS

Microcontrollers - MCU ARM Microcontrollers - MCU 32bit ARM Cortex-M0+ microcontrolle
유효성
재고:
Available
주문 시:
1985
수량 입력:
SPD04N80C3ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.55
US$1.55
10
US$1.32
US$13.20
100
US$1.01
US$101.00
500
US$0.90
US$450.50
1000
US$0.71
US$711.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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