 | |  | |
| PartNumber | SPD02N50C3 | SPD01N60C3BTMA1 | SPD02N50C3BTMA1 |
| Description | IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | MOSFET N-CH 650V 0.8A TO-252 | LOW POWER_LEGACY |
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Reel | - | - |
| Part Aliases | SP000313942 SPD02N50C3BTMA1 SPD02N50C3XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 15 ns | - | - |
| Rise Time | 5 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Channel Mode | Enhancement | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD02N80C3ATMA1 | MOSFET LOW POWER_LEGACY | |
| SPD03N50C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD03N60C3ATMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD02N50C3 | IGBT Transistors MOSFET N-Ch 500V 1.8A DPAK-2 CoolMOS C3 | ||
| SPD03N60C3ATMA1 | MOSFET N-CH 600V 3.2A DPAK | ||
| SPD02N80C3ATMA1 | MOSFET N-CH 800V 2A 3TO252 | ||
| SPD02N80C3BTMA1 | MOSFET N-CH 800V 2A TO-252 | ||
| SPD01N60C3BTMA1 | MOSFET N-CH 650V 0.8A TO-252 | ||
| SPD02N50C3BTMA1 | LOW POWER_LEGACY | ||
| SPD02N60C3BTMA1 | MOSFET N-CH 650V 1.8A DPAK | ||
| SPD02N60S5BTMA1 | MOSFET N-CH 600V 1.8A TO-252 | ||
| SPD03N50C3ATMA1 | MOSFET N-CH 500V 3.2A DPAK | ||
| SPD03N50C3BTMA1 | MOSFET N-CH 560V 3.2A DPAK | ||
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET LOW POWER_LEGACY | |
| SPD03N50C3BTMA1 | MOSFET LOW POWER_LEGACY | ||
| SPD03N60C3 | IGBT Transistors MOSFET N-Ch 600V 3.2A DPAK-2 CoolMOS C3 | ||
| SPD03N50C3 | IGBT Transistors MOSFET N-Ch 500V 3.2A DPAK-2 CoolMOS C3 | ||
| SPD02N60S5 | IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5 | ||
| SPD02N80C3 | IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3 | ||
| SPD02N80C3ATMA1-CUT TAPE | 신규 및 오리지널 | ||
| SPD03N50C3ATMA1-CUT TAPE | 신규 및 오리지널 | ||
| SPD0-4FB | 신규 및 오리지널 | ||
| SPD0011M | 신규 및 오리지널 | ||
| SPD0011MQT6 | 신규 및 오리지널 | ||
| SPD01-O | 신규 및 오리지널 | ||
| SPD015A | 신규 및 오리지널 | ||
| SPD015GD | 신규 및 오리지널 | ||
| SPD01N60 | 신규 및 오리지널 | ||
| SPD01N60C3 | MOSFET N-Ch 600V 800mA DPAK-2 CoolMOS C3 | ||
| SPD02N50C3. | 신규 및 오리지널 | ||
| SPD02N60 | 신규 및 오리지널 | ||
| SPD02N60C3 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| SPD02N60C3(02N60C3) | 신규 및 오리지널 | ||
| SPD02N60C3,02N60C3 | 신규 및 오리지널 | ||
| SPD02N60C3_05 | 신규 및 오리지널 | ||
| SPD02N60C5 | 신규 및 오리지널 | ||
| SPD02N60S5 02N60S5 | 신규 및 오리지널 | ||
| SPD02N80 | 신규 및 오리지널 | ||
| SPD02N80C3,02N80C3 | 신규 및 오리지널 | ||
| SPD02N80C3. | 신규 및 오리지널 | ||
| SPD02U60C3 | 신규 및 오리지널 | ||
| SPD0301ZD | 신규 및 오리지널 | ||
| SPD030G | PRESSURE SENSOR, 0-200KPA, DIP-6, Pressure Type:Gauge, Sensitivity, V/P:-, Operating Pressure Min:0kPa, Operating Pressure Max:200kPa, Supply Voltage Min:0V, Supply Voltage Max:10V, Sensor Case | ||
| SPD031N06L 031N06L 100A 60V | 신규 및 오리지널 | ||
| SPD03N50C3 FQD3N60C | 신규 및 오리지널 | ||
| SPD03N50C3_08 | 신규 및 오리지널 | ||
| SPD03N60 | 신규 및 오리지널 | ||
| SPD03N60C3 03N60C3 INFI | 신규 및 오리지널 | ||
| SPD03N60C3,03N60C3 | 신규 및 오리지널 | ||
| SPD03N60C3,03N60C3, | 신규 및 오리지널 |