IPB033N10N5LFATMA1

Mfr. #:: IPB033N10N5LFATMA1
제조사:: Infineon Technologies
설명:: MOSFET DIFFERENTIATED MOSFETS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB033N10N5LFATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: D2PAK-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 120 A

Rds On - 드레인 소스 저항:: 2.7 mOhms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 102 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 179 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

시리즈:: OptiMOS 5

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 23 S

가을 시간:: 48 ns

상품 유형:: MOSFET

상승 시간:: 32 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 64 ns

일반적인 켜기 지연 시간:: 8 ns

부품 번호 별칭:: IPB033N10N5LF SP001503858

단위 무게:: 0.067021 oz

Tags: IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB033N10N5LFATMA1 설명

***i-Key: MOSFET N-CH 100V D2PAK-3

***p One Stop Japan: Trans MOSFET N-CH 100V 120A

***et: MOS Power Transistors LV ( 41V-100V)

***ark: Mosfet, N-Ch, 100V, 120A, 179W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 120A, 179W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CAN N, 100V, 120A, 179W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management

Market price

부분 #	제조	설명	재고	가격
IPB033N10N5LFATMA1 DISTI # V72:2272_17076760	Infineon Technologies AG	DIFFERENTIATED MOSFETS	486	250:$3.3280 100:$3.6060 25:$4.0540 10:$4.1280 1:$4.7760
IPB033N10N5LFATMA1 DISTI # V36:1790_17076760	Infineon Technologies AG	DIFFERENTIATED MOSFETS	0
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	421In Stock	500:$3.6824 100:$4.5475 10:$5.5460 1:$6.2100
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	421In Stock	500:$3.6824 100:$4.5475 10:$5.5460 1:$6.2100
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V D2PAK-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$3.0152
IPB033N10N5LFATMA1 DISTI # 26196750	Infineon Technologies AG	DIFFERENTIATED MOSFETS	486	250:$3.5776 100:$3.8765 25:$4.3581 10:$4.4376 3:$5.1342
IPB033N10N5LFATMA1 DISTI # SP001503858	Infineon Technologies AG	MOS Power Transistors LV ( 41V-100V) (Alt: SP001503858) RoHS: Compliant Min Qty: 1000	Europe - 126	1000:€2.5900 2000:€2.4900 4000:€2.3900 6000:€2.1900 10000:€2.0900
IPB033N10N5LFATMA1 DISTI # IPB033N10N5LFATMA1	Infineon Technologies AG	MOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: IPB033N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.7900 2000:$2.6900 4000:$2.5900 6000:$2.4900 10000:$2.3900
IPB033N10N5LFATMA1 DISTI # 93AC7099	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes	710	500:$2.6000 250:$2.9000 100:$3.0500 50:$3.2100 25:$3.3600 10:$3.5200 1:$4.1400
IPB033N10N5LFATMA1 DISTI # 726-IPB033N10N5LFATM	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	2098	1:$5.1800 10:$4.4000 100:$3.8100 250:$3.6200 500:$3.2500 1000:$2.7400 2000:$2.6000
IPB033N10N5LFATMA1 DISTI # 2986457	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263 RoHS: Compliant	700	500:£2.4600 250:£2.8100 100:£2.9600 10:£3.4300 1:£4.4600
IPB033N10N5LFATMA1 DISTI # 2986457	Infineon Technologies AG	MOSFET, N-CH, 100V, 120A, 179W, TO-263 RoHS: Compliant	700	1000:$3.7800 500:$4.2300 250:$4.6700 100:$4.9300 10:$5.6200 1:$7.1600

관련 상품

영상	부분 #	설명
	Mfr.#: ADN4650BRWZ OMO.#: OMO-ADN4650BRWZ	Digital Isolators 5 kV/3.75 kV rms Signal I
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: CRCW06034K70FKEAC OMO.#: OMO-CRCW06034K70FKEAC	Thick Film Resistors - SMD 1/10Watt 4.7Kohms 1% Commercial Use
	Mfr.#: IPB083N15N5LFATMA1 OMO.#: OMO-IPB083N15N5LFATMA1	MOSFET
	Mfr.#: CRCW060310K0FKECC OMO.#: OMO-CRCW060310K0FKECC	Thick Film Resistors - SMD 1/10Watt 10Kohms 1% Commercial Use
	Mfr.#: IPB083N15N5LFATMA1 OMO.#: OMO-IPB083N15N5LFATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 105A TO263-3
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
	Mfr.#: ADN4650BRWZ OMO.#: OMO-ADN4650BRWZ-ANALOG-DEVICES-INC-ADI	Digital Isolators 5 kV/3.75 kV rms Signal I
	Mfr.#: AC0603FR-13100RL OMO.#: OMO-AC0603FR-13100RL-1190	YAGAC0603FR-13100RL - Tape and Reel (Alt: AC0603FR-13100RL)
	Mfr.#: CRCW06034K70FKEAC OMO.#: OMO-CRCW06034K70FKEAC-VISHAY-DALE	D11/CRCW0603-C 100 4K7 1% ET1

유효성

재고:: Available
주문 시:: 1984
수량 입력:

IPB033N10N5LFATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$5.18~~; ~~US$5.18~~

10: ~~US$4.40~~; ~~US$44.00~~

100: ~~US$3.81~~; ~~US$381.00~~

250: ~~US$3.62~~; ~~US$905.00~~

500: ~~US$3.25~~; ~~US$1 625.00~~

시작

IPB03 70
IPB0 405
IPB 1339

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IPB033N10N5LFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes