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SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
제조사:
STMicroelectronics
설명:
SILICON CARBIDE POWER MOSFET 650
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCTW90N65G2V 데이터 시트
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SCTW90N65G2V 추가 정보 SCTW90N65G2V Product Details
제품 속성
속성 값
Tags
SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
***ow.cn
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
***ure Electronics
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
***nell
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;
***et
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
부분 # 제조 설명 재고 가격
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
      영상 부분 # 설명
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V

      		 MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      SCTW90N65G2V

      Mfr.#: SCTW90N65G2V

      OMO.#: OMO-SCTW90N65G2V-STMICROELECTRONICS

      		 SILICON CARBIDE POWER MOSFET 650
      유효성
      재고:
      Available
      주문 시:
      1500
      수량 입력:
      SCTW90N65G2V의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$56.25
      US$56.25
      10
      US$53.44
      US$534.38
      100
      US$50.62
      US$5 062.50
      500
      US$47.81
      US$23 906.25
      1000
      US$45.00
      US$45 000.00
      시작
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