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IXFN82N60Q3

IXFN82N60Q3
Mfr. #:
IXFN82N60Q3
제조사:
Littelfuse
설명:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN82N60Q3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN82N60Q3 DatasheetIXFN82N60Q3 Datasheet (P4-P5)
ECAD Model:
추가 정보:
IXFN82N60Q3 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
66 A
Rds On - 드레인 소스 저항:
75 mOhms
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
275 nC
Pd - 전력 손실:
960 W
구성:
하나의
상표명:
HiPerFET
포장:
튜브
시리즈:
IXFN82N60
트랜지스터 유형:
1 N-Channel
상표:
익시스
상품 유형:
MOSFET
상승 시간:
300 ns
공장 팩 수량:
10
하위 카테고리:
MOSFET
단위 무게:
1.058219 oz
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
부분 # 제조 설명 재고 가격
IXFN82N60Q3
DISTI # V36:1790_15877469		IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN82N60Q3
    DISTI # IXFN82N60Q3-ND    		IXYS CorporationMOSFET N-CH 600V 66A SOT-227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		24In Stock
    • 100:$34.9950
    • 30:$37.3280
    • 10:$40.3610
    • 1:$43.1600
    IXFN82N60Q3
    DISTI # 747-IXFN82N60Q3    		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A
    RoHS: Compliant    		0
    • 1:$43.1600
    • 5:$41.6500
    • 10:$40.3700
    • 25:$37.3300
    • 50:$36.2300
    • 100:$35.0000
    • 200:$32.6700
    영상 부분 # 설명
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3

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    Mfr.#: IXFN80N50Q3

    OMO.#: OMO-IXFN80N50Q3

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    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50

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    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2

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    IXFN80N50

    Mfr.#: IXFN80N50

    OMO.#: OMO-IXFN80N50-IXYS-CORPORATION

    		 MOSFET N-CH 500V 80A SOT-227B
    IXFN80N50P

    Mfr.#: IXFN80N50P

    OMO.#: OMO-IXFN80N50P-IXYS-CORPORATION

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    Mfr.#: IXFN80N48

    OMO.#: OMO-IXFN80N48-IXYS-CORPORATION

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    IXFN80N50Q2

    Mfr.#: IXFN80N50Q2

    OMO.#: OMO-IXFN80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFN82N60P

    Mfr.#: IXFN82N60P

    OMO.#: OMO-IXFN82N60P-IXYS-CORPORATION

    		 IGBT Transistors MOSFET DIODE Id82 BVdass600
    IXFN80N60P3

    Mfr.#: IXFN80N60P3

    OMO.#: OMO-IXFN80N60P3-IXYS-CORPORATION

    		 MOSFET N-CH 600V 66A SOT-227B
    유효성
    재고:
    Available
    주문 시:
    3500
    수량 입력:
    IXFN82N60Q3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$43.16
    US$43.16
    5
    US$41.65
    US$208.25
    10
    US$40.37
    US$403.70
    25
    US$37.33
    US$933.25
    50
    US$36.23
    US$1 811.50
    100
    US$35.00
    US$3 500.00
    200
    US$32.67
    US$6 534.00
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