IRF6775MTR1PBF

Mfr. #:: IRF6775MTR1PBF
제조사:: Infineon / IR
설명:: MOSFET 150V N-CH 8A 47mOhm for Digital Audio
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF6775MTR1PBF 데이터 시트
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HTML Datasheet:: IRF6775MTR1PBF Datasheet IRF6775MTR1PBF Datasheet (P4-P6)IRF6775MTR1PBF Datasheet (P7-P9)IRF6775MTR1PBF Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DirectFET-MZ

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 150 V

Id - 연속 드레인 전류:: 28 A

Rds On - 드레인 소스 저항:: 47 mOhms

Vgs th - 게이트 소스 임계 전압:: 5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 25 nC

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 89 W

구성:: 하나의

포장:: 릴

키:: 0.7 mm

길이:: 6.35 mm

트랜지스터 유형:: 1 N-Channel

너비:: 5.05 mm

상표:: 인피니언 / IR

순방향 트랜스컨덕턴스 - 최소:: 11 S

가을 시간:: 15 ns

습기에 민감한:: 네

상품 유형:: MOSFET

상승 시간:: 7.8 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001551188

단위 무게:: 0.017637 oz

Tags: IRF67, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6775MTR1PBF 설명

***(Formerly Allied Electronics): MOSFET, N-Ch, VDSS 150V, RDS(ON) 47 mOhm, ID 28A, DirectFET

***ment14 APAC: MOSFET, N, DIRECTFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:150V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.9A; Package / Case:MZ; Power Dissipation Pd:89W; Pulse Current Idm:39A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 28 amperes optimized with low on resistance for applications such as Class D Audio Amplifier. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in pa

***(Formerly Allied Electronics): IRFR4615PBF N-channel MOSFET Transistor; 33 A; 150 V; 3-Pin DPAK

***ure Electronics: Single N-Channel 150 V 42 mOhm 26 nC HEXFET® Power Mosfet - DPAK

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED

*** Source Electronics: Trans MOSFET N-CH 150V 33A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 150V 33A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dis

***ineon SCT: Digital Audio 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 150V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 150V 33A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 150V, 33A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0345ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; P

***emi: N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ

***ure Electronics: N-Channel 150 V 54 mOhm Surface Mount PowerTrench Mosfet TO-252AA

***r Electronics: Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, SMD, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:29A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

***ure Electronics: N-Channel 150 V 66 mOhm Surface Mount PowerTrench Mosfet - TO-252AA

***nell: MOSFET, N CH, 150V, 21A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***r Electronics: Power Field-Effect Transistor, 3.7A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***(Formerly Allied Electronics): SUD25N15-52-E3 N-channel MOSFET Transistor; 25 A; 150 V; 3-Pin TO-252

***ure Electronics: Single N-Channel 150 V 0.052 Ohms Surface Mount Power Mosfet - TO-252

*** Source Electronics: MOSFET N-CH 150V 25A TO252 / Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) DPAK

***ment14 APAC: MOSFET, N CH, 150V, 25A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:150V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:100W; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:25A; Package / Case:TO-252; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Market price

부분 #	제조	설명	재고	가격
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6775MTR1PBF DISTI # IRF6775MTR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 4.9A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6775MTR1PBF DISTI # 70018868	Infineon Technologies AG	MOSFET,N-Ch,VDSS 150V,RDS(ON) 47 mOhm,ID 28A,DirectFET RoHS: Compliant	0	1000:$1.8000 2000:$1.6300
IRF6775MTR1PBF DISTI # 942-IRF6775MTR1PBF	Infineon Technologies AG	MOSFET 150V N-CH 8A 47mOhm for Digital Audio RoHS: Compliant	0
IRF6775MTR1PBF	International Rectifier	RoHS: Compliant	Europe - 1000
IRF6775MTR1PBF DISTI # 1602267	Infineon Technologies AG	MOSFET, N, DIRECTFET MZ RoHS: Compliant	0	1:$4.6100 10:$3.7900 100:$3.0700 500:$2.7400 1000:$2.4300 2000:$2.2600 5000:$2.1900 10000:$2.0500

영상	부분 #	설명
	Mfr.#: IRF6775MTRPBF OMO.#: OMO-IRF6775MTRPBF	MOSFET 150V 1 x N-CH HEXFET for Digital Audio
	Mfr.#: IRF6775MTR1PBF OMO.#: OMO-IRF6775MTR1PBF	MOSFET 150V N-CH 8A 47mOhm for Digital Audio
	Mfr.#: IRF6775MTR1PBF OMO.#: OMO-IRF6775MTR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 150V 4.9A DIRECTFET
	Mfr.#: IRF6775MTRPBF OMO.#: OMO-IRF6775MTRPBF-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET 150V 1 x N-CH HEXFET for Digital Audio

IRF6775MTR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes