SIHF22N60E-GE3

Mfr. #:: SIHF22N60E-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHF22N60E-GE3 데이터 시트
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ECAD Model:
추가 정보:: SIHF22N60E-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: E

포장: 튜브

단위 무게: 0.211644 oz

장착 스타일: 구멍을 통해

상표명: E 시리즈

패키지 케이스: TO-220-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 35 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 35 ns

상승 시간: 27 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 21 A

Vds-드레인-소스-고장-전압: 600 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 180 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 66 ns

일반 켜기 지연 시간: 18 ns

Qg-Gate-Charge: 86 nC

순방향 트랜스컨덕턴스-최소: 6.4 S

채널 모드: 상승

Tags: SIHF22N60E, SIHF22N60, SIHF22, SIHF2, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHF22N60E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHF22N60E-GE3 DISTI # SIHF22N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	2000In Stock	1000:$2.2330 500:$2.6477 100:$3.2698 50:$3.5888 1:$4.4700
SIHF22N60E-GE3 DISTI # SIHF22N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF22N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$2.0900 2000:$1.9900 4000:$1.8900 6000:$1.8900 10000:$1.7900
SIHF22N60E-GE3 DISTI # 19X1936	Vishay Intertechnologies	MOSFET Transistor, N Channel, 21 A, 600 V, 0.15 ohm, 10 V, 2 V RoHS Compliant: Yes	5260	1:$4.0700 10:$3.3700 25:$3.1700 50:$2.9700 100:$2.7700
SIHF22N60E-GE3 DISTI # 78-SIHF22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	112	1:$4.0700 10:$3.3700 100:$2.7700
SIHF22N60E-E3 DISTI # 781-SIHF22N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	4	1:$3.5700 10:$2.9600 100:$2.4400 250:$2.3600 500:$2.1200 1000:$1.7900 2500:$1.7000
SIHF22N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 500
SIHF22N60E-GE3 DISTI # 2364078	Vishay Intertechnologies	MOSFET, N-CH, 600V, 12A, TO-220FP RoHS: Compliant	5260	1:$6.4400 10:$5.3400 100:$4.3800
SIHF22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF22N60E-GE3 DISTI # 2364078	Vishay Intertechnologies	MOSFET, N-CH, 600V, 12A, TO-220FP RoHS: Compliant	5260	1:£3.5200 10:£2.6000 100:£2.1300 250:£2.0900 500:£2.0400

관련 상품

영상	부분 #	설명
	Mfr.#: SIHF22N60E-GE3 OMO.#: OMO-SIHF22N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF22N65E-GE3 OMO.#: OMO-SIHF22N65E-GE3	MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF22N60E-E3 OMO.#: OMO-SIHF22N60E-E3	MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
	Mfr.#: SIHF22N60E-E3 OMO.#: OMO-SIHF22N60E-E3-VISHAY	IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
	Mfr.#: SIHF22N60S-E3 OMO.#: OMO-SIHF22N60S-E3-126	IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
	Mfr.#: SIHF22N65E-GE3 OMO.#: OMO-SIHF22N65E-GE3-VISHAY	RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
	Mfr.#: SIHF22N60E-GE3 OMO.#: OMO-SIHF22N60E-GE3-VISHAY	RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
	Mfr.#: SIHF22N60E OMO.#: OMO-SIHF22N60E-1190	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: SIHF22N65E OMO.#: OMO-SIHF22N65E-1190	신규 및 오리지널
	Mfr.#: SIHF22N6OE-E3 OMO.#: OMO-SIHF22N6OE-E3-1190	신규 및 오리지널