SIHF22N65E-GE3

Mfr. #:: SIHF22N65E-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHF22N65E-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIHF22N65E-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

시리즈: E

포장: 대부분

단위 무게: 0.211644 oz

장착 스타일: 구멍을 통해

상표명: E 시리즈

패키지 케이스: TO-220-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 227 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 38 ns

상승 시간: 33 ns

Id-연속-드레인-전류: 22 A

Vds-드레인-소스-고장-전압: 650 V

Vgs-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 180 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 73 ns

일반 켜기 지연 시간: 22 ns

Qg-Gate-Charge: 110 nC

순방향 트랜스컨덕턴스-최소: 6.7 S

Tags: SIHF22, SIHF2, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHF22N65E-GE3 설명

***ical: Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220 Full-Pak

***ure Electronics: E Series N Channel 700 V 0.18 O 110 nC Flange Mount Power Mosfet - TO-220FP

*** Europe: N-CH SINGLE 650V TO220FP

***et: N-CHANNEL 650V

SIHF22N65E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHF22N65E-GE3 DISTI # SIHF22N65E-GE3-ND	Vishay Siliconix	MOSFET N-CH 650V 22A TO-220FK Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$2.4640
SIHF22N65E-GE3 DISTI # SIHF22N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 22A 3-Pin TO-220FP T/R - Tape and Reel (Alt: SIHF22N65E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.1900 4000:$2.2900 6000:$2.2900 2000:$2.3900 1000:$2.4900
SIHF22N65E-GE3 DISTI # SIHF22N65E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 650V 22A 3-Pin TO-220FP T/R (Alt: SIHF22N65E-GE3) Min Qty: 1 Container: Tape and Reel	Europe - 0
SIHF22N65E-GE3 DISTI # 78-SIHF22N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	0	1:$4.9200 10:$4.0800 100:$3.3600 250:$3.2500 500:$2.9200 1000:$2.4600 2500:$2.3200
SIHF22N65E-GE3	Vishay Intertechnologies	MOSFET 650V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF22N65E-GE3	Vishay Intertechnologies		619

관련 상품

영상	부분 #	설명
	Mfr.#: SIHF22N60E-GE3 OMO.#: OMO-SIHF22N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF22N65E-GE3 OMO.#: OMO-SIHF22N65E-GE3	MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF22N60E-E3 OMO.#: OMO-SIHF22N60E-E3	MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
	Mfr.#: SIHF22N60E-E3 OMO.#: OMO-SIHF22N60E-E3-VISHAY	IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
	Mfr.#: SIHF22N60S-E3 OMO.#: OMO-SIHF22N60S-E3-126	IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
	Mfr.#: SIHF22N65E-GE3 OMO.#: OMO-SIHF22N65E-GE3-VISHAY	RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
	Mfr.#: SIHF22N60E-GE3 OMO.#: OMO-SIHF22N60E-GE3-VISHAY	RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
	Mfr.#: SIHF22N60 OMO.#: OMO-SIHF22N60-1190	신규 및 오리지널
	Mfr.#: SIHF22N60E OMO.#: OMO-SIHF22N60E-1190	Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: SIHF22N65E OMO.#: OMO-SIHF22N65E-1190	신규 및 오리지널