IRF7341GTRPBF

IRF7341GTRPBF
Mfr. #:
IRF7341GTRPBF
제조사:
Infineon / IR
설명:
MOSFET PLANAR_MOSFETS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF7341GTRPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7341GTRPBF DatasheetIRF7341GTRPBF Datasheet (P4-P6)IRF7341GTRPBF Datasheet (P7-P9)
ECAD Model:
추가 정보:
IRF7341GTRPBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
55 V
Id - 연속 드레인 전류:
5.1 A
Rds On - 드레인 소스 저항:
65 mOhms, 65 mOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
29 nC, 29 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
2.4 W
구성:
듀얼
채널 모드:
상승
포장:
키:
1.75 mm
길이:
4.9 mm
트랜지스터 유형:
2 N-Channel
너비:
3.9 mm
상표:
인피니언 / IR
순방향 트랜스컨덕턴스 - 최소:
10.4 S, 10.4 S
가을 시간:
12.5 ns, 12.5 ns
상품 유형:
MOSFET
상승 시간:
7.7 ns, 7.7 ns
공장 팩 수량:
4000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
31 ns, 31 ns
일반적인 켜기 지연 시간:
9.2 ns, 9.2 ns
부품 번호 별칭:
SP001563394
단위 무게:
0.017870 oz
Tags
IRF7341, IRF734, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 55V 5.1A 8-Pin SOIC T/R
***ark
MOSFET, DUAL N-CHANNEL, 55V, 5.1A, SO-8, Q101 qualified, TAPE & REEL
***ineon SCT
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
부분 # 제조 설명 재고 가격
IRF7341GTRPBF
DISTI # 24580469
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 40000:$0.7564
  • 24000:$0.7583
  • 16000:$0.7602
  • 8000:$0.7621
  • 4000:$0.7641
IRF7341GTRPBF
DISTI # IRF7341GTRPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 5.1A
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 4000:$0.9281
IRF7341GTRPBF
DISTI # C1S322000647873
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R
RoHS: Compliant
4000
  • 4000:$0.8420
IRF7341GTRPBF
DISTI # IRF7341GTRPBF
Infineon Technologies AGTrans MOSFET N-CH 55V 5.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7341GTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 4000
  • 4000:$0.7959
  • 8000:$0.7939
  • 16000:$0.7919
  • 24000:$0.7899
  • 40000:$0.7879
IRF7341GTRPBF
DISTI # 49AC0327
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.1A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes3850
  • 1:$1.8400
  • 10:$1.5700
  • 25:$1.4600
  • 50:$1.3600
  • 100:$1.2500
  • 250:$1.1800
  • 500:$1.1000
  • 1000:$0.9070
IRF7341GTRPBF
DISTI # 942-IRF7341GTRPBF
Infineon Technologies AGMOSFET PLANAR_MOSFETS
RoHS: Compliant
3336
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 4000:$0.8130
IRF7341GTRPBF
DISTI # 2839483
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant
3850
  • 5:$3.3200
  • 25:$2.8900
  • 100:$2.3600
  • 250:$1.9900
  • 500:$1.7200
  • 1000:$1.6300
  • 5000:$1.5400
IRF7341GTRPBF
DISTI # 2839483
Infineon Technologies AGMOSFET, DUAL N-CH, 55V, 5.1A, SOIC-8
RoHS: Compliant
3840
  • 1:£2.0100
  • 10:£1.5600
  • 100:£1.2000
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OMO.#: OMO-AD620BRZ-R7-ANALOG-DEVICES-INC-ADI

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AD822BRZ-REEL

Mfr.#: AD822BRZ-REEL

OMO.#: OMO-AD822BRZ-REEL-ANALOG-DEVICES-INC-ADI

Precision Amplifiers SGL-Supply RR Lo Pwr FET-Inpt Dual
유효성
재고:
Available
주문 시:
1986
수량 입력:
IRF7341GTRPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.84
US$1.84
10
US$1.57
US$15.70
100
US$1.25
US$125.00
500
US$1.10
US$550.00
1000
US$0.91
US$907.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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