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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIHF830S-GE3 DISTI # 70615653 | Vishay Siliconix | SIHF830S-GE3 N-channel MOSFET Transistor,4.5 A,500 V,3-Pin D2PAK RoHS: Compliant | 0 |
|
| IRF830PBF | Vishay Intertechnologies | MOSFET N-CH500V HEXFET MOSFET RoHS: Compliant | Americas - 1200 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SIHP33N60EF-GE3 OMO.#: OMO-SIHP33N60EF-GE3 |
MOSFET 600V Vds 30V Vgs TO-220AB |
|
Mfr.#: SIHG460B-GE3 OMO.#: OMO-SIHG460B-GE3 |
MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS |
|
|
Mfr.#: SIHW23N60E-GE3 OMO.#: OMO-SIHW23N60E-GE3 |
MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS |
|
Mfr.#: SIHP21N65EF-GE3 OMO.#: OMO-SIHP21N65EF-GE3-VISHAY |
RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS |
|
Mfr.#: SIH34 OMO.#: OMO-SIH34-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SIHB22N60E OMO.#: OMO-SIHB22N60E-1190 |
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: SIHFIB9N65A,SIHFIB9N65A- |
신규 및 오리지널 |
|
|
Mfr.#: SIHP22N60S-E3/45 OMO.#: OMO-SIHP22N60S-E3-45-1190 |
신규 및 오리지널 |
|
Mfr.#: SIHA25N60EFL-E3 OMO.#: OMO-SIHA25N60EFL-E3-VISHAY |
MOSFET N-CHANNEL 600V 25A TO220 |
|
Mfr.#: SIHH14N65E-T1-GE3 OMO.#: OMO-SIHH14N65E-T1-GE3-VISHAY |
Trans MOSFET N-CH 650V 15A 4-Pin PowerPAK EP T/R |