SQJQ100E-T1_GE3

SQJQ100E-T1_GE3
Mfr. #:
SQJQ100E-T1_GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 40V Vds 160A Id AEC-Q101 Qualified
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SQJQ100E-T1_GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJQ100E-T1_GE3 DatasheetSQJQ100E-T1_GE3 Datasheet (P4-P6)
ECAD Model:
추가 정보:
SQJQ100E-T1_GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-8x8L-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
40 V
Id - 연속 드레인 전류:
160 A
Rds On - 드레인 소스 저항:
900 uOhms
Vgs th - 게이트 소스 임계 전압:
1.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
220 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
136 W
구성:
하나의
채널 모드:
상승
자격:
AEC-Q101
상표명:
TrenchFET
포장:
시리즈:
광장
트랜지스터 유형:
1 N-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
122 S
가을 시간:
30 ns
상품 유형:
MOSFET
상승 시간:
60 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
60 ns
일반적인 켜기 지연 시간:
24 ns
Tags
SQJQ1, SQJQ, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK
***et Europe
N-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ
***i-Key
MOSFET N-CH 40V 200A POWERPAK8
***ark
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:136W; Transistor Case Style:PowerPAK; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, CA-N, 40V, POWERPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:200A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):900µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:PowerPAK; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
부분 # 제조 설명 재고 가격
SQJQ100E-T1_GE3
DISTI # V72:2272_17600386
Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
9172
3107023
0
    SQJQ100E-T1_GE3
    DISTI # V99:2348_17600386
    Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
    9172
    3107023
    0
    • 2000:$1.3190
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3TR-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    On Order
    • 6000:$1.2285
    • 2000:$1.2757
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3CT-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3
    Vishay IntertechnologiesN-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ - Tape and Reel (Alt: SQJQ100E-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 12000:$1.0900
    • 20000:$1.0900
    • 4000:$1.1900
    • 8000:$1.1900
    • 2000:$1.2900
    SQJQ100E-T1_GE3
    DISTI # 20AC4001
    Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
    • 10000:$1.1300
    • 6000:$1.1700
    • 4000:$1.2200
    • 2000:$1.3500
    • 1000:$1.4300
    • 1:$1.5200
    SQJQ100E-T1_GE3
    DISTI # 78-SQJQ100E-T1_GE3
    Vishay IntertechnologiesMOSFET 40V Vds 160A Id AEC-Q101 Qualified
    RoHS: Compliant
    0
    • 1:$2.7900
    • 10:$2.3200
    • 100:$1.8000
    • 500:$1.5700
    • 1000:$1.3000
    • 2000:$1.2100
    • 4000:$1.1700
    SQJQ100E-T1_GE3
    DISTI # 2708322
    Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK
    RoHS: Compliant
    0
    • 1000:$2.1300
    • 500:$2.5700
    • 100:$3.1300
    • 10:$3.8900
    • 1:$4.3300
    SQJQ100E-T1_GE3
    DISTI # 2708322
    Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK0
    • 500:£1.2700
    • 250:£1.4200
    • 100:£1.4600
    • 10:£1.7700
    • 1:£2.4200
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    LM5050Q1MKX-1/NOPB

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    Gate Drivers High Side OR-ing FET Controlle
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    SQJQ100E-T1_GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.79
    US$2.79
    10
    US$2.32
    US$23.20
    100
    US$1.80
    US$180.00
    500
    US$1.57
    US$785.00
    1000
    US$1.30
    US$1 300.00
    시작
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