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| PartNumber | SQJ202EP-T1_GE3 | SQJ200EP-T1_GE3 | SQJ148EP-T1_GE3 |
| Description | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 |
| Number of Channels | 2 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 20 V | 40 V |
| Id Continuous Drain Current | 20 A, 60 A | 20 A, 60 A | 15 A |
| Rds On Drain Source Resistance | 5.2 mOhms, 2.5 mOhms | 7.4 mOhms, 3.1 mOhms | 27 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 22 nC, 54 nC | 18 nC, 43 nC | 20 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 27 W, 48 W | 27 W, 48 W | 45 W |
| Configuration | Dual | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 2 N-Channel | 2 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 49 S, 91 S | 55 S, 60 S | 29 S |
| Fall Time | 2.6 ns, 5 ns | 13 ns, 14 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.2 ns, 4.5 ns | 18 ns, 17 ns | 3 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns, 28 ns | 13 ns, 19 ns | 14 ns |
| Typical Turn On Delay Time | 8.8 ns, 10.7 ns | 4 ns, 7 ns | 7 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | 1.04 mm | 1.04 mm |
| Length | - | 6.15 mm | 6.15 mm |
| Width | - | 5.13 mm | 5.13 mm |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ208EP-T1_GE3 | MOSFET Dual Nch 40V Vds PowerPAK SO-8L | |
| SQJ415EP-T1_GE3 | MOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L | ||
| SQJ204EP-T1_GE3 | MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L | ||
| SQJ244EP-T1_GE3 | MOSFET 40V Vds -/+20V Vgs PowerPAK SO-8L | ||
| SQJ414EP-T1_GE3 | MOSFET Dual N-Ch 30V AEC-Q101 Qualified | ||
| SQJ202EP-T1_GE3 | MOSFET Dual N Ch 12V Vds AEC-Q101 Qualified | ||
| SQJ407EP-T1_GE3 | MOSFET -30V Vds PowerPAK AEC-Q101 Qualified | ||
| SQJ200EP-T1_GE3 | MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified | ||
| SQJ401EP-T1_GE3 | MOSFET P-Channel 12V AEC-Q101 Qualified | ||
| SQJ403EP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ410EP-T1_GE3 | MOSFET N-Channel 30V AEC-Q101 Qualified | ||
| SQJ402EP-T1_GE3 | MOSFET 100V 32A 27watt AEC-Q101 Qualified | ||
| SQJ412EP-T1_GE3 | MOSFET 40V 32A 83W AEC-Q101 Qualified | ||
| SQJ403BEEP-T1_GE3 | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ148EP-T1_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQJ401EP-T2_GE3 | MOSFET RECOMMENDED ALT 78-SQJ411EP-T1_GE3 | ||
| SQJ412EP-T2_GE3 | MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3 | ||
| SQJ402EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ402EP-T1_GE3 | ||
| SQJ412EP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3 | ||
| SQJ412EP-T1-GE3 | IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive | ||
| SQJ402EP-T1-GE3 | IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive | ||
| SQJ410EP-T1-GE3 | RF Bipolar Transistors MOSFET N-Channel 30V Automotive MOSFET | ||
| SQJ401EP-T1-GE3 | RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET | ||
| SQJ148EP | 신규 및 오리지널 | ||
| SQJ200EP | 신규 및 오리지널 | ||
| SQJ200ZP-GZ3 | 신규 및 오리지널 | ||
| SQJ202EP | 신규 및 오리지널 | ||
| SQJ401EP-T1 | 신규 및 오리지널 | ||
| SQJ401EPT1GE3 | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SQJ402EP | 신규 및 오리지널 | ||
| SQJ402EPT1GE3 | Power Field-Effect Transisto | ||
| SQJ403EEP | 신규 및 오리지널 | ||
| SQJ403EEP-SO-8L | 신규 및 오리지널 | ||
| SQJ403EEP-T1-GE3 | MOSFET P-Channel 30V Automotive MOSFET | ||
| SQJ403EEP-TE2-GE3 | 신규 및 오리지널 | ||
| SQJ411EP | 신규 및 오리지널 | ||
| SQJ414EP | 신규 및 오리지널 | ||
Vishay |
SQJ409EP-T1_GE3 | MOSFET P-CH 40V 60A POWERPAKSO-8 | |
| SQJ412EP-T1_GE3 | MOSFET N-CH 40V 32A PPAK SO-8 | ||
| SQJ402EP-T1_GE3 | MOSFET N-CH 100V POWERPAK SO8L | ||
| SQJ410EP-T1_GE3 | MOSFET N-CH 30V 32A POWERPAKSO-8 | ||
| SQJ401EP-T1_GE3 | MOSFET P-CH 12V 32A POWERPAKSO-8 | ||
| SQJ403BEEP-T1_GE3 | MOSFET P-CH 30V 30A POWERPAKSO-8 | ||
| SQJ148EP-T1_GE3 | MOSFET N-CH 40V 15A POWERPAKSO-8 | ||
| SQJ158EP-T1_GE3 | MOSFET N-CH 60V 23A POWERPAKSO-8 | ||
| SQJ200EP-T1_GE3 | MOSFET 2N-CH 20V 20A/60A PPAK SO | ||
| SQJ202EP-T1_GE3 | MOSFET 2N-CH 12V 20A/60A PPAK SO | ||
| SQJ260EP-T1_GE3 | MOSFET 2 N-CH 60V POWERPAK SO8 | ||
| SQJ407EP-T1_GE3 | MOSFET P-CH 30V 60A POWERPAKSO-8 | ||
| SQJ414EP-T1_GE3 | MOSFET N-CH 30V 30A POWERPAKSOL |