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IRF6674TR1PBF

IRF6674TR1PBF
Mfr. #:
IRF6674TR1PBF
제조사:
Infineon / IR
설명:
MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF6674TR1PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6674TR1PBF DatasheetIRF6674TR1PBF Datasheet (P4-P6)IRF6674TR1PBF Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
DirectFET-MZ
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
67 A
Rds On - 드레인 소스 저항:
9 mOhms
Vgs th - 게이트 소스 임계 전압:
4.9 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
24 nC
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
89 W
구성:
하나의
포장:
릴
키:
0.7 mm
길이:
6.35 mm
트랜지스터 유형:
1 N-Channel
너비:
5.05 mm
상표:
인피니언 / IR
순방향 트랜스컨덕턴스 - 최소:
16 S
가을 시간:
8.7 ns
습기에 민감한:
네
상품 유형:
MOSFET
상승 시간:
12 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001571484
Tags
IRF667, IRF66, IRF6, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N-Ch, VDSS 60V, RDS(ON) 9 mOhm, ID 13.4A, DirectFET
***ical
Trans MOSFET N-CH 60V 13.4A 7-Pin Direct-FET MZ T/R
***i-Key
MOSFET N-CH 60V 13.4A DIRECTFET
***ukat
N-Ch 60V 67A 89W 0,011R MZ
***ark
; Continuous Drain Current, Id:13.4A; On Resistance, Rds(on):9mohm; Current, Idm pulse:134A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ernational Rectifier
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***nell
MOSFET, N-CH, 60V, DIRECTFETMX; Transistor Polarity:N; On State Resistance:9mohm; Transistor Case Style:MZ; Alternate Case Style:DirectFET; Case Style:MZ; Cont Current Id:13.4A; Max Voltage Vgs th:4.9V; Min Voltage Vgs th:3V; Pulse Current Idm:134A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V
***ment14 APAC
MOSFET, N CH, 60V, 13.4A, DFET MZ; Transistor Polarity:N Channel; Continuous Drain Current Id:13.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:13.4A; Package / Case:MZ; Power Dissipation Pd:3.6W; Pulse Current Idm:134A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V
부분 # 제조 설명 재고 가격
IRF6674TR1PBF
DISTI # IRF6674TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6674TR1PBF
    DISTI # IRF6674TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6674TR1PBF
      DISTI # IRF6674TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 60V 13.4A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6674TR1PBF
        DISTI # 70018851        		Infineon Technologies AGMOSFET,N-Ch,VDSS 60V,RDS(ON) 9 mOhm,ID 13.4A,DirectFET
        RoHS: Compliant        		0
        • 1000:$1.7300
        • 2000:$1.5800
        IRF6674TR1PBF
        DISTI # 942-IRF6674TR1PBF        		Infineon Technologies AGMOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
        RoHS: Compliant        		0
          영상 부분 # 설명
          IRF6674TRPBF

          Mfr.#: IRF6674TRPBF

          OMO.#: OMO-IRF6674TRPBF

          		 MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
          IRF6674TR1PBF

          Mfr.#: IRF6674TR1PBF

          OMO.#: OMO-IRF6674TR1PBF

          		 MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
          IRF6678TR1PBF

          Mfr.#: IRF6678TR1PBF

          OMO.#: OMO-IRF6678TR1PBF

          		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
          IRF6678

          Mfr.#: IRF6678

          OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 30A DIRECTFET
          IRF6678TR1PBF

          Mfr.#: IRF6678TR1PBF

          OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 30A DIRECTFET
          IRF6678TR1

          Mfr.#: IRF6678TR1

          OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 30A DIRECTFET
          IRF6674TRPBF

          Mfr.#: IRF6674TRPBF

          OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
          IRF6674TR1PBF

          Mfr.#: IRF6674TR1PBF

          OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
          IRF6678TRPBF

          Mfr.#: IRF6678TRPBF

          OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
          유효성
          재고:
          Available
          주문 시:
          3000
          수량 입력:
          IRF6674TR1PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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