IRFB4127PBF

Mfr. #:: IRFB4127PBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 200V 76A 20mOhm 100nC Qg
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFB4127PBF 데이터 시트
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HTML Datasheet:: IRFB4127PBF Datasheet IRFB4127PBF Datasheet (P4-P6)IRFB4127PBF Datasheet (P7-P8)
ECAD Model:
추가 정보:: IRFB4127PBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 76 A

Rds On - 드레인 소스 저항:: 20 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 100 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 375 W

구성:: 하나의

채널 모드:: 상승

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 79 S

가을 시간:: 22 ns

상품 유형:: MOSFET

상승 시간:: 18 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 56 ns

일반적인 켜기 지연 시간:: 17 ns

부품 번호 별칭:: SP001560212

단위 무게:: 0.211644 oz

Tags: IRFB4127P, IRFB412, IRFB41, IRFB4, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB4127PBF 설명

***ure Electronics: Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

*** Electronics: In a Pack of 2, N-Channel MOSFET, 76 A, 200 V, 3-Pin TO-220AB Infineon IRFB4127PBF

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 375 W

***(Formerly Allied Electronics): MOSFET, N Ch., 200V, 76A, 21 MOHM, 110 NC, D2-PAK, Pb-Free

***roFlash: Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N Channel Mosfet, 200V, 76A, To-220Ab; Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:76A; Transistor Mounting:through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:200V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***eco: Transistor MOSFET N Channel 150 Volt 8 Amp 3-Pin 3+ Tab TO-220AB Tube

***ure Electronics: N-Channel 150 V 16 mO Flange Mount PowerTrench Mosfet - TO-220AB

***emi: N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ

***Yang: Trans MOSFET N-CH 150V 8A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:150V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:79A; Package / Case:TO-220AB; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:430A; SMD Marking:FDP2532; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): IRFB4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-220AB

*** Source Electronics: Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 150V 83A TO-220AB

***ure Electronics: Single N-Channel 150V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 150V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; N-channel Gate Charge:71nC; Package / Case:TO-220AB; Power Dissipation Pd:330W; Power Dissipation Pd:330mW; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***ineon SCT: 150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***(Formerly Allied Electronics): MOSFET, 150V, 83A, 15 MOHM, 72 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 330 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 150V, 83A, TO220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 330W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 4228; Current Id Max: 83A; Driver Case Style: TO-220AB; Operating Temperature Min: -40°C; Operating Temperature Range: -40°C to +175°C; Output Resistance: 0.012ohm; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 150V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 5V; Voltage Vgs th Min: 3V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB

***ure Electronics: Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330

***p One Stop Global: Trans MOSFET N-CH 150V 85A 3-Pin(3+Tab) TO-220AB

*** Electronics: MOSFET 150V 85A 300W 21mohm @ 10V

***: 150V N-CH 175 DEG.C RATED TREN

***ment14 APAC: N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:150V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.4W; MSL:-

***ure Electronics: Single N-Channel 200 V 0.033 Ohms Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 200V 57A 3-Pin(3+Tab) TO-220AB

***ment14 APAC: MOSFET, N-CH, 200V, 57A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Source Voltage Vds:200V; On Resistance

***ark: MOSFET, N-CH, 200V, 57A, 175DEG C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 57A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

IRFB4127PBF 추가 정보

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

부분 #	제조	설명	재고	가격
IRFB4127PBF DISTI # V99:2348_13891130	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube	44	1:$2.9670
IRFB4127PBF DISTI # IRFB4127PBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 76A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	850In Stock	1000:$2.3788 500:$2.7720 100:$3.3619 10:$4.0420 1:$4.5000
IRFB4127PBF DISTI # 28959510	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube	4773	7:$1.5203
IRFB4127PBF DISTI # 30613875	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube	180	50:$2.2950 10:$2.7030 7:$4.0035
IRFB4127PBF DISTI # 29721815	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube	44	10:$2.6160 5:$2.9560
IRFB4127PBF DISTI # IRFB4127PBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB4127PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 50	1:$1.4900 10:$1.4900 25:$1.4900 50:$1.4900 100:$1.3900 500:$1.3900 1000:$1.2900
IRFB4127PBF DISTI # SP001560212	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001560212) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 220	1:€3.3600 10:€2.5400 100:€2.2000 250:€2.0900 500:€1.8800 1000:€1.5300
IRFB4127PBF DISTI # IRFB4127PBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRFB4127PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 0
IRFB4127PBF DISTI # 45P3441	Infineon Technologies AG	MOSFET Transistor, N Channel, 76 A, 200 V, 17 mohm, 20 V, 5 V RoHS Compliant: Yes	1671	1:$3.6400 10:$3.1000 25:$2.9600 50:$2.8300 100:$2.6900 250:$2.5500 500:$2.2900
IRFB4127PBF DISTI # 27P5255	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 76A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:76A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes	56	1:$3.6400 10:$3.1000 25:$2.9600 50:$2.8300 100:$2.6900 250:$2.5500 500:$2.2900
IRFB4127PBF. DISTI # 27AC6767	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 76A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:76A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes	0	1:$3.6400 10:$3.1000 25:$2.9600 50:$2.8300 100:$2.6900 250:$2.5500 500:$2.2900
IRFB4127PBF DISTI # 70017917	Infineon Technologies AG	IRFB4127PBF N-channel MOSFET Transistor,76 A,200 V,3-Pin TO-220AB RoHS: Compliant	0	200:$3.6600
IRFB4127PBF DISTI # 942-IRFB4127PBF	Infineon Technologies AG	MOSFET MOSFT 200V 76A 20mOhm 100nC Qg RoHS: Compliant	1575	1:$3.6400 10:$3.1000 100:$2.6900 250:$2.5500 500:$2.2900 1000:$1.9300 2000:$1.8300
IRFB4127PBF	Infineon Technologies AG	Single N-Channel 200 V 20 mOhm 150 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	14604Tube	5:$2.1200 50:$1.9300 300:$1.6200
IRFB4127PBF	International Rectifier	Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	65	1000:$1.8200 500:$1.9100 100:$1.9900 25:$2.0800 1:$2.2400
IRFB4127PBF DISTI # 6886936	Infineon Technologies AG	MOSFET N-CHANNEL 200V 76A HEXFET TO220AB, PK	72	2:£2.9100 26:£2.6100
IRFB4127PBF DISTI # 6886936P	Infineon Technologies AG	MOSFET N-CHANNEL 200V 76A HEXFET TO220AB, TU	678	26:£2.6100
IRFB4127PBF	Infineon Technologies AG		80	40:$5.9385 12:$6.4200 1:$9.6300
IRFB4127PBF DISTI # IRFB4127PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,76A,375W,TO220AB	125	1:$3.5500 3:$3.2500 10:$2.6800 100:$2.3900
IRFB4127PBF DISTI # TMOSP12117	Infineon Technologies AG	N-CH 200V 76A 20mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock US - 0	50:$2.6600 100:$2.5100 250:$2.3500 450:$2.1200 850:$2.0500
IRFB4127PBF DISTI # IRFB4127PBF	Infineon Technologies AG	N-Ch 200V 76A 375W 0,02R TO220AB RoHS: Compliant	110	10:€1.8900 50:€1.5900 200:€1.4900 500:€1.4300
IRFB4127PBF	International Rectifier	RoHS: Compliant	Europe - 177
IRFB4127PBF	Infineon Technologies AG	INSTOCK	127
IRFB4127PBF	Infineon Technologies AG	INSTOCK	763
IRFB4127PBF DISTI # C1S327400178136	Infineon Technologies AG	Trans MOSFET N-CH 200V 76A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	147	10:$1.8000 1:$2.5200
IRFB4127PBF DISTI # C1S322000634091	Infineon Technologies AG	MOSFETs RoHS: Compliant	294	1000:$2.6200
IRFB4127PBF DISTI # C1S322000488614	Infineon Technologies AG	MOSFETs RoHS: Compliant	180	50:$1.8000 10:$2.1400 1:$3.1700
IRFB4127PBF DISTI # XSLY00000000915	INFINEON/IR	TO-220AB RoHS: Compliant	11484	400:$1.7100 11484:$1.6000
IRFB4127PBF	Infineon Technologies AG	RoHS (ship within 1day)	100	1:$4.8600 10:$4.1400 50:$3.5800 100:$3.4200 500:$3.2800 1000:$3.2100
IRFB4127PBF	Infineon Technologies AG	200V,20m,76A,N-Channel Power MOSFET	800	1:$3.1800 100:$2.6500 500:$2.3400 1000:$2.2700
IRFB4127PBF DISTI # 1688598	Infineon Technologies AG	MOSFET, N-CH, 200V, TO-220AB RoHS: Compliant	674	1:$5.7700 10:$4.9100 100:$4.2600 250:$4.0400 500:$3.6300 1000:$3.0600 2000:$2.9600
IRFB4127PBF DISTI # 1688598	Infineon Technologies AG	MOSFET, N-CH, 200V, TO-220AB RoHS: Compliant	1671	1:£2.9700 10:£2.3400 100:£2.0300 250:£1.8800 500:£1.6900

영상	부분 #	설명
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	Mfr.#: 530613B00000G OMO.#: OMO-530613B00000G	Heat Sinks Channel Style Stamped Heatsink for TO-220, Wide Mounting Surface, Horizontal/Vertical Mounting, 16.7 n Thermal Resistance, Black Anodized, 12.19x10.16mm
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IRFB4127PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes