 |  | | |
| PartNumber | IRFB4127PBF | IRFB4127PBF , 2SK1070PID | IRFB4127PBF,IRFB4127 |
| Description | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 76 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 100 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 79 S | - | - |
| Fall Time | 22 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | SP001560212 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFB4127PBF | MOSFET MOSFT 200V 76A 20mOhm 100nC Qg | |
| IRFB4127PBF | MOSFET N-CH 200V 76A TO-220AB | ||
| IRFB4127PBF , 2SK1070PID | 신규 및 오리지널 | ||
| IRFB4127PBF,IRFB4127 | 신규 및 오리지널 | ||
| IRFB4127PBF,IRFB4127, | 신규 및 오리지널 | ||
| IRFB4127PBF-S | 신규 및 오리지널 |