OMO ElectronicOMO Electronic
Expand menu
0 카트

APT80GA60B

APT80GA60B
Mfr. #:
APT80GA60B
제조사:
Microchip / Microsemi
설명:
IGBT Transistors FG, IGBT, 600V, TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
APT80GA60B 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT80GA60B DatasheetAPT80GA60B Datasheet (P4-P6)
ECAD Model:
제품 속성
속성 값
제조사:
마이크로칩
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
2 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
143 A
Pd - 전력 손실:
625 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
포장:
튜브
연속 수집가 현재 IC 최대:
143 A
키:
21.46 mm
길이:
16.26 mm
작동 온도 범위:
- 55 C to + 150 C
너비:
5.31 mm
상표:
마이크로칩 / 마이크로세미
지속적인 수집가 전류:
143 A
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1
하위 카테고리:
IGBT
상표명:
POWER MOS 8
단위 무게:
1.340411 oz
Tags
APT80GA, APT80G, APT80, APT8, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Pt Mos 8 Single 600 V 80 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT80GA60B
***ical
Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 143A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***ical
Trans IGBT Chip N-CH 600V 150A 428000mW 3-Pin(3+Tab) TO-247 Tube
***ment14 APAC
IGBT,600V,75A,TO247; Transistor Type:IGBT; DC Collector Current:75A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:428W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 110A 446000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT 600V 110A 446W TO247
***th Star Micro
Insulated Gate Bipolar Transistor - NPT Standard Speed
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***ource
Thunderbolt IGBT
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF
***hine Compare
Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC
*** Electronics
IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 600 Volt 55A 3-Pin(3+Tab) TO-247AC
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UPBF
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2 V Current release time: 120 ns Power dissipation: 200 W
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50U; Fall Time Max:120ns; Fall Time tf:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 600V, 120A, To-247-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube / IGBT 600V 150A 750W POWER-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V,75A,POWER-247; Transistor Type:IGBT; DC Collector Current:150A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:Power 247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
부분 # 제조 설명 재고 가격
APT80GA60B
DISTI # APT80GA60B-ND		Microsemi CorporationIGBT 600V 143A 625W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		11In Stock
  • 510:$7.6528
  • 270:$8.3934
  • 120:$9.1340
  • 30:$10.1213
  • 10:$11.1090
  • 1:$12.3400
APT80GA60B
DISTI # 494-APT80GA60B		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
RoHS: Compliant		70
  • 1:$11.5200
  • 10:$10.3700
  • 25:$9.4500
  • 50:$8.8000
  • 100:$8.5200
  • 250:$7.7800
  • 500:$7.1000
  • 1000:$6.0100
영상 부분 # 설명
TC4432COA

Mfr.#: TC4432COA

OMO.#: OMO-TC4432COA

 Gate Drivers 1.5A Sngl 30V N-Inv
1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73

 Rectifiers Vr/100V Io/1A
FTD7904

Mfr.#: FTD7904

OMO.#: OMO-FTD7904-612

 Toggle Switches SPDT ON-ON 6A PNL TOGGLE
TC4432COA

Mfr.#: TC4432COA

OMO.#: OMO-TC4432COA-MICROCHIP-TECHNOLOGY

 Gate Drivers 1.5A Sngl 30V N-Inv
ERJ-3RBD2002V

Mfr.#: ERJ-3RBD2002V

OMO.#: OMO-ERJ-3RBD2002V-1090

 Thick Film Resistors - SMD 0603 20Kohms 0.5%Tol
1N4002-E3/73

Mfr.#: 1N4002-E3/73

OMO.#: OMO-1N4002-E3-73-VISHAY

 Rectifiers Vr/100V Io/1A
유효성
재고:
69
주문 시:
2052
수량 입력:
APT80GA60B의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$11.52
US$11.52
10
US$10.37
US$103.70
25
US$9.45
US$236.25
50
US$8.80
US$440.00
100
US$8.52
US$852.00
250
US$7.78
US$1 945.00
500
US$7.10
US$3 550.00
1000
US$6.01
US$6 010.00
시작
최신 제품
  • dsPIC33CH Curiosity Development Board
    dsPIC33CH Curiosity Development Board
    Microchip Technology's DM330028-2 Curiosity development board is a cost-effective, fully integrated 16-bit development platform.
  • MPLAB® ICD 4 Programmer/Debugger
    MPLAB® ICD 4 Programmer/Debugger
    Microchip Technology's MPLAB ICD 4 programmer/debugger includes all the features of the popular MPLAB ICD 3 debugger while adding increased speed through a faster processor and increased RAM.
  • AVR® XMEGA® LCD Peripheral
    AVR® XMEGA® LCD Peripheral
    Microchip's XMEGAs, with integrated ultra-low-power LCD controllers, need only 3 µA to run the LCD display and include built-in contrast control.
  • ZigBee® PRO Platform
    ZigBee® PRO Platform
    Microchip Technology has released the industry’s first ZigBee alliance certified ZigBee platform with ZigBee PRO and green power features.
  • Compare APT80GA60B
    Compare APT80GA60B
    APT80GA60B vs APT80GA60LD40 vs APT80GA90B
  • ATA6560/61 Controller Area Network (CAN) Flexible
    ATA6560/61 Controller Area Network (CAN) Flexible
    Microchip's ATA6560 and ATA6561 CAN FD transceivers feature three operating modes, dedicated fail-safe features, and are suitable for high-speed CAN networks.
More Newest Products
Top